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IRF640SPBF

High-power N-channel MOSFET capable of handling 18A current at 200V voltage

Quantity Unit Price(USD) Ext. Price
1 $1.429 $1.43
10 $1.236 $12.36
30 $1.128 $33.84
100 $0.970 $97.00
500 $0.916 $458.00
1000 $0.893 $893.00

Inventory:4,443

*The price is for reference only.
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Overview of IRF640SPBF

The IRF640SPBF is a power MOSFET transistor designed for high-power switching applications.It features a low on-state resistance and high switching speed,making it ideal for use in power supplies,motor controls,and inverters.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • G:Gate
  • D:Drain
  • S:Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRF640SPBF MOSFET for a visual representation.

Key Features

  • High Power Handling Capability:The IRF640SPBF can handle high power levels,allowing for efficient power switching.
  • Low On-State Resistance:With a low RDS(on),this MOSFET minimizes power loss and heat generation during operation.
  • Fast Switching Speed:Featuring a high switching speed,this transistor ensures rapid switching transitions for improved circuit performance.
  • High Temperature Resistance:The IRF640SPBF is designed to withstand high temperatures,ensuring reliable operation in demanding environments.

Note:For detailed technical specifications,please refer to the IRF640SPBF datasheet.

Application

  • Power Supplies:Suitable for use in power supply circuits for voltage regulation and power switching applications.
  • Motor Controls:Used in motor control circuits for driving and controlling the speed of motors efficiently.
  • Inverters:Ideal for inverter circuits converting DC power to AC power in various applications.

Functionality

The IRF640SPBF power MOSFET transistor is designed for high-power switching applications.It provides efficient power switching capabilities for a wide range of electronic systems.

Usage Guide

  • Gate Drive:Apply the proper gate voltage to turn the MOSFET on and off effectively.
  • Heat Management:Ensure proper heat sinking to dissipate heat generated during high-power operation.

Frequently Asked Questions

Q:Can the IRF640SPBF be used in high-temperature environments?
A:Yes,the IRF640SPBF is designed to withstand high temperatures for reliable operation.

Equivalent

For similar functionalities,consider these alternatives to the IRF640SPBF:

  • IRF740:A power MOSFET transistor with comparable specifications to the IRF640SPBF and suitable for similar applications.
  • IRFZ44N:This is another power MOSFET transistor offering similar performance characteristics to the IRF640SPBF.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case D2PAK-3 (TO-263-3)
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 200 V Id - Continuous Drain Current 18 A
Rds On - Drain-Source Resistance 180 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2 V Qg - Gate Charge 70 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 125 W Channel Mode Enhancement
Series IRF Brand Vishay Semiconductors
Configuration Single Fall Time 36 ns
Forward Transconductance - Min 6.7 S Product Type MOSFET
Rise Time 51 ns Factory Pack Quantity 1000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 45 ns Typical Turn-On Delay Time 14 ns
Unit Weight 0.139332 oz

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IRF640SPBF

High-power N-channel MOSFET capable of handling 18A current at 200V voltage

Inventory:

4,443