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IRF612

Power MOSFET IRF612 designed for efficient switching operations with a maximum current of 2.6A and a resistance of 2.4ohm

Inventory:3,103

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Overview of IRF612

The IRF612 is a power MOSFET transistor designed for high efficiency power applications. It is capable of handling high current loads and is suitable for use in a wide range of power electronics circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Gate (G): Control pin for the MOSFET gate voltage
  • Drain (D): Connection to the positive load or power supply
  • Source (S): Connection to the ground or negative side of the load

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRF612 MOSFET for a visual representation.

Key Features

  • High Current Capability: The IRF612 can handle high current loads, making it suitable for power applications.
  • Low On-Resistance: Provides low on-resistance for efficient power handling and minimal power dissipation.
  • Fast Switching Speed: Offers fast switching characteristics for responsive power control.
  • Low Gate Threshold Voltage: Operates effectively with a low gate-source threshold voltage.
  • High Input Impedance: Features high input impedance for easy interfacing with control circuits.

Note: For detailed technical specifications, please refer to the IRF612 datasheet.

Application

  • Switching Power Supplies: Suitable for use in switching power supply applications.
  • Motor Control: Used in motor control circuits for efficient power handling.
  • LED Lighting: Ideal for driving LED lighting systems with high efficiency.

Functionality

The IRF612 is a power MOSFET transistor designed for high current handling and efficient power control in various electronic applications.

Usage Guide

  • Gate Control: Apply the appropriate gate-source voltage to control the power flow through the MOSFET.
  • Load Connection: Connect the load or power supply to the drain and source pins for power switching.

Frequently Asked Questions

Q: Can the IRF612 be used for high-frequency applications?
A: The IRF612 is suitable for moderate-frequency switching applications, but for high-frequency requirements, alternative MOSFETs optimized for high speed may be considered.

Equivalent

For similar functionalities, consider these alternatives to the IRF612:

  • IRF540: A power MOSFET with comparable characteristics suitable for power applications.
  • IRF3205: This MOSFET offers similar power handling capabilities and is commonly used in high-current circuits.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code No Rohs Code No
Part Life Cycle Code Active Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V Drain Current-Max (ID) 2.6 A
Drain-source On Resistance-Max 2.4 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB JESD-30 Code R-PSFM-T3
JESD-609 Code e0 Moisture Sensitivity Level NOT SPECIFIED
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 6.5 A Qualification Status COMMERCIAL
Surface Mount NO Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Application SWITCHING
Transistor Element Material SILICON

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IRF612

Power MOSFET IRF612 designed for efficient switching operations with a maximum current of 2.6A and a resistance of 2.4ohm

Inventory:

3,103