IRF612
Power MOSFET IRF612 designed for efficient switching operations with a maximum current of 2.6A and a resistance of 2.4ohm
Inventory:3,103
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Part Number : IRF612
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Package/Case : TO220
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Manufacturer : Harris Corporation
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Components Classification : Single FETs, MOSFETs
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Datesheet : IRF612 DataSheet (PDF)
The IRF612 is a power MOSFET transistor designed for high efficiency power applications. It is capable of handling high current loads and is suitable for use in a wide range of power electronics circuits. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the IRF612 MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the IRF612 datasheet. Functionality The IRF612 is a power MOSFET transistor designed for high current handling and efficient power control in various electronic applications. Usage Guide Q: Can the IRF612 be used for high-frequency applications? For similar functionalities, consider these alternatives to the IRF612:Overview of IRF612
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The IRF612 is suitable for moderate-frequency switching applications, but for high-frequency requirements, alternative MOSFETs optimized for high speed may be considered.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Pbfree Code | No | Rohs Code | No |
Part Life Cycle Code | Active | Ihs Manufacturer | ROCHESTER ELECTRONICS LLC |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 200 V | Drain Current-Max (ID) | 2.6 A |
Drain-source On Resistance-Max | 2.4 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-220AB | JESD-30 Code | R-PSFM-T3 |
JESD-609 Code | e0 | Moisture Sensitivity Level | NOT SPECIFIED |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | N-CHANNEL |
Pulsed Drain Current-Max (IDM) | 6.5 A | Qualification Status | COMMERCIAL |
Surface Mount | NO | Terminal Finish | TIN LEAD |
Terminal Form | THROUGH-HOLE | Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy ?
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Shipping and Package ?
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Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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IRF612
Power MOSFET IRF612 designed for efficient switching operations with a maximum current of 2.6A and a resistance of 2.4ohm
Inventory:
3,103
Warranty & Returns
After Sales Service
What after-sales service can be provided?
We provide an extended quality assurance period of 365 days for all components we offer. If a return or exchange becomes essential, kindly adhere to these guidelines:
·Initiate the request within 90 days after the item's shipment date.
·Coordinate the return or exchange with our team.
·Keep the items in their original condition as delivered.
·Please be aware that the feasibility of returning or exchanging items is contingent upon an evaluation of their actual state upon return.
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