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IRF5851TR

Mosfet Array 20V 2.7A

Inventory:7,960

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Overview of IRF5851TR

The IRF5851TR is a compact and efficient power MOSFET designed for various electronic applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • VCC: Power Supply Input
  • GND: Ground

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRF5851TR MOSFET for a visual representation.

Key Features

  • High Power Handling Capability: The IRF5851TR can handle high power levels, suitable for power electronics applications.
  • Low On-Resistance: With low on-resistance, this MOSFET minimizes power loss and heat generation.
  • Fast Switching Speed: Offers fast switching characteristics, ideal for applications requiring rapid switching.
  • Compact Size: Its small form factor enables space-efficient PCB layouts.
  • Enhanced Thermal Performance: Designed for improved thermal dissipation to ensure reliable operation under high loads.

Note: For detailed technical specifications, please refer to the IRF5851TR datasheet.

Application

  • Power Supplies: Suitable for use in power supply circuits and voltage regulation systems.
  • Motor Control: Ideal for motor control applications in industrial and automotive systems.
  • DC-DC Converters: Commonly used in DC-DC converter modules for efficient power management.

Functionality

The IRF5851TR power MOSFET offers high power handling capability with low on-resistance and fast switching speeds, making it versatile for various power electronics applications.

Usage Guide

  • Power Supply Connection: Connect the VCC pin to the power supply and the GND pin to the ground.
  • Gate Control: Apply appropriate gate voltage to control the switching behavior of the MOSFET.
  • Load Connection: Connect the load between the drain (D) and source (S) pins of the MOSFET.

Frequently Asked Questions

Q: Is the IRF5851TR suitable for high-frequency switching applications?
A: Yes, the IRF5851TR offers fast switching speeds and can be used in high-frequency applications.

Equivalent

For similar functionalities, consider these alternatives to the IRF5851TR:

  • IRF540N: A widely used power MOSFET suitable for various electronic applications.
  • IRF3205: This MOSFET offers high power handling and low on-resistance for efficient power management.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series HEXFET® Packaging Tape & Reel (TR)
Part Status Obsolete Technology MOSFET (Metal Oxide)
Configuration N and P-Channel FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2.7A, 2.2A
Rds On (Max) @ Id, Vgs 90mOhm @ 2.7A, 4.5V Vgs(th) (Max) @ Id 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 400pF @ 15V
Power - Max 960mW Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package 6-TSOP Base Product Number IRF58

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