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IRF510PBF

Trans MOSFET N-CH 100V 5.6A

Quantity Unit Price(USD) Ext. Price
1 $0.479 $0.48
10 $0.395 $3.95
50 $0.324 $16.20
100 $0.283 $28.30
500 $0.259 $129.50
1000 $0.246 $246.00

Inventory:6,389

*The price is for reference only.
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Submit your quote request for IRF510PBF using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of IRF510PBF

The IRF510PBF is an N-Channel Power MOSFET transistor designed for high-power switching applications. It features a low on-state resistance and high drain current capability, making it suitable for power amplification, motor control, and voltage regulation.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRF510PBF MOSFET for a visual representation.

Key Features

  • N-Channel Power MOSFET: Suitable for high-power switching applications.
  • Low On-State Resistance: Provides efficient power management with minimal voltage drop.
  • High Drain Current Capability: Capable of handling high currents for power amplification.
  • Fast Switching Speed: Offers rapid switching transitions for enhanced performance.
  • Enhanced Thermal Performance: Designed for effective heat dissipation to maintain device reliability.

Note: For detailed technical specifications, please refer to the IRF510PBF datasheet.

Application

  • Power Amplification: Ideal for amplifying power signals in audio amplifiers and RF circuits.
  • Switching Circuits: Suitable for use in high-power switching circuits for motor control and voltage regulation.
  • Voltage Regulation: Used in voltage regulator circuits to maintain stable output voltages.

Functionality

The IRF510PBF N-Channel Power MOSFET transistor is designed for high-power switching applications, providing efficient power management and high current handling capabilities.

Usage Guide

  • Connection: Connect the Gate (G), Drain (D), and Source (S) pins to the corresponding terminals in the circuit.
  • Drive Voltage: Apply the recommended gate voltage for proper switching operation.
  • Heat Dissipation: Ensure adequate heat sinking to maintain the MOSFET within safe operating temperatures.

Frequently Asked Questions

Q: What is the maximum drain current of the IRF510PBF?
A: The IRF510PBF is capable of handling a maximum drain current specified in the datasheet.

Q: Can the IRF510PBF be used in power amplifier circuits?
A: Yes, the IRF510PBF is suitable for power amplifier applications requiring high current and low on-state resistance characteristics.

Equivalent

For similar functionalities, consider these alternatives to the IRF510PBF:

  • IRF520PBF: A higher power N-Channel MOSFET with similar characteristics to the IRF510PBF.
  • IRF540PBF: This MOSFET offers higher voltage and current ratings compared to the IRF510PBF for increased power handling capabilities.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style Through Hole Package / Case TO-220-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 100 V Id - Continuous Drain Current 5.6 A
Rds On - Drain-Source Resistance 540 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 4 V Qg - Gate Charge 8.3 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 43 W Channel Mode Enhancement
Series IRF Brand Vishay Semiconductors
Configuration Single Fall Time 9.4 ns
Product Type MOSFET Rise Time 16 ns
Factory Pack Quantity 1000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 15 ns
Typical Turn-On Delay Time 6.9 ns Part # Aliases IRF510PBF-BE3
Unit Weight 0.068784 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy ?

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package ?

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment ?

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

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IRF510PBF

Trans MOSFET N-CH 100V 5.6A

Inventory:

6,389
Overview of IRF510PBF Specifications Warranty & Returns Similar Products Popular Products

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After Sales Service

What after-sales service can be provided?

We provide an extended quality assurance period of 365 days for all components we offer. If a return or exchange becomes essential, kindly adhere to these guidelines:

·Initiate the request within 90 days after the item's shipment date.

·Coordinate the return or exchange with our team.

·Keep the items in their original condition as delivered.

·Please be aware that the feasibility of returning or exchanging items is contingent upon an evaluation of their actual state upon return.

Shipping

What channels of transportation of goods does the website support?

We usually send out our orders during business days using FedEx, SF, UPS, or DHL. We're also here to assist with alternative shipping options. Should you require additional information about shipping particulars or expenses, please don't hesitate to get in touch with us.

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Package

How to ensure that the parts will be intact during transportation?

The items we ship will be packaged in anti-static bags, ensuring ESD anti-static protection, while the outer packaging boasts exceptional durability and sealing. We offer packaging options like Tape and Reel, Cut Tape, Tube, or Tray to suit your needs.

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