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IRF3711PBF

Trans MOSFET N-CH 20V 110A 3-Pin(3+Tab) TO-220AB Tube

Inventory:9,821

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Overview of IRF3711PBF

The IRF3711PBF is a power MOSFET transistor designed for high-power switching applications.This MOSFET features a low on-resistance and high current capability,making it suitable for use in power supplies,motor control,and other high-power electronic circuits.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • G:Gate
  • D:Drain
  • S:Source

Circuit Diagram

Include a circuit diagram illustrating the implementation of the IRF3711PBF MOSFET in a switching circuit for visual reference.

Key Features

  • High Current Capability:The IRF3711PBF can handle high currents,making it suitable for power applications.
  • Low On-Resistance:This MOSFET offers low on-resistance,leading to reduced power loss and improved efficiency.
  • Fast Switching Speed:With its high-speed switching capability,this MOSFET enables rapid switching operations in electronic circuits.
  • Enhanced Thermal Performance:The IRF3711PBF is designed for enhanced thermal dissipation,helping to maintain optimal operating temperatures.
  • Robust Construction:The MOSFET is built to withstand high voltages and currents,ensuring reliable performance in demanding conditions.

Note:For detailed technical specifications,please refer to the IRF3711PBF datasheet.

Application

  • Power Supplies:Ideal for use in power supply circuits due to its high current handling capability.
  • Motor Control:Suitable for motor control applications where high-power switching is required.
  • Inverters and Converters:Used in inverters and converters to efficiently switch high currents in power electronics.

Functionality

The IRF3711PBF MOSFET is designed to control high currents with low on-resistance,providing efficient switching and power handling capabilities for various electronic applications.

Usage Guide

  • G:Connect the Gate pin to the control signal source for turning the MOSFET on and off.
  • D:Connect the Drain pin to the load or power supply for switching the high current.
  • S:Connect the Source pin to the ground or common reference point of the circuit.

Frequently Asked Questions

Q:Can the IRF3711PBF be used in high-power amplifier circuits?
A:Yes,the IRF3711PBF is suitable for high-power amplifier applications requiring efficient power handling capabilities.

Q:Does the IRF3711PBF require an external heat sink for thermal management?
A:Depending on the application and power dissipation requirements,an external heat sink may be recommended for optimal thermal performance.

Equivalent

For similar functionalities,consider these alternatives to the IRF3711PBF:

  • IRF3205:A power MOSFET with comparable specifications and performance characteristics to the IRF3711PBF.
  • IRF540N:This MOSFET offers similar high-power switching capabilities and is widely used in power electronic applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style Through Hole
Package / Case TO-220-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 110 A Rds On - Drain-Source Resistance 8.5 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 29 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 120 W
Brand Infineon Technologies Configuration Single
Fall Time 12 ns Forward Transconductance - Min 53 S
Height 15.65 mm Length 10 mm
Product Type MOSFET Rise Time 220 ns
Factory Pack Quantity 1000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 17 ns
Typical Turn-On Delay Time 12 ns Width 4.4 mm
Part # Aliases SP001561720 Unit Weight 0.068784 oz

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IRF3711PBF

Trans MOSFET N-CH 20V 110A 3-Pin(3+Tab) TO-220AB Tube

Inventory:

9,821