• IRF3205STRLPBF D2PAK
IRF3205STRLPBF D2PAK

IRF3205STRLPBF

Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

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Overview of IRF3205STRLPBF

VDSS= 55V RDS(on)= 8.0mΩ ID= 110A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated

IRF3205STRLPBF

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid IRF3205STRLPBF Rohs Code Yes
Part Life Cycle Code Active Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G2 Reach Compliance Code not_compliant
ECCN Code EAR99 Factory Lead Time 65 Weeks
Samacsys Manufacturer Infineon Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas) 264 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 55 V
Drain Current-Max (Abs) (ID) 110 A Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.008 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 211 pF JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 2 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 200 W
Pulsed Drain Current-Max (IDM) 390 A Qualification Status Not Qualified
Surface Mount YES Terminal Finish MATTE TIN OVER NICKEL
Terminal Form GULL WING Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30 Transistor Application SWITCHING
Transistor Element Material SILICON Turn-off Time-Max (toff) 115 ns
Turn-on Time-Max (ton) 115 ns

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