• IRF200P222 TO-247AC
IRF200P222 TO-247AC


High power N-channel MOSFET for reliable switching applicatio

Quantity Unit Price(USD) Ext. Price
1 $5.537 $5.54
10 $4.866 $48.66
25 $4.247 $106.18
100 $3.903 $390.30


*The price is for reference only.
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Overview of IRF200P222

The IRF200P222 is a power MOSFET transistor designed for use in electronic power switching applications. This transistor offers high power handling capabilities and low on-resistance, making it suitable for various power management tasks.


(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection

Circuit Diagram

Incorporate a circuit diagram that illustrates the connections and operation of the IRF200P222 MOSFET transistor for a more visual representation.

Key Features

  • High Power Handling: The IRF200P222 can handle high power levels, suitable for demanding power switching applications.
  • Low On-Resistance: With its low on-resistance, this transistor minimizes power loss and heat generation during operation.
  • Robust Construction: Designed for reliability, the IRF200P222 features a robust construction suitable for various operating conditions.
  • Fast Switching Speed: This MOSFET transistor offers fast switching speeds, enabling efficient power management.
  • Wide Operating Temperature Range: Operates over a wide temperature range, making it suitable for diverse environmental conditions.

Note: For detailed technical specifications, please refer to the IRF200P222 datasheet.


  • Power Management: Ideal for use in electronic power switching circuits, such as motor control, power supplies, and inverters.
  • Switching Circuits: Suitable for various switching applications in both industrial and consumer electronic devices.
  • Voltage Regulation: Can be used for voltage regulation tasks in power management systems.


The IRF200P222 is a power MOSFET transistor designed for high-power switching applications. It offers low on-resistance and high power handling capabilities, making it an efficient solution for power management tasks.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the Gate (G) pin to control the switching operation.
  • Load Connection: Connect the load between the Drain (D) and Source (S) pins for power switching applications.
  • Heat Management: Ensure proper heat sinking to manage the heat generated during high-power operation.

Frequently Asked Questions

Q: What is the maximum power handling capability of the IRF200P222?
A: The IRF200P222 can handle high power levels suitable for demanding power switching applications.

Q: Is the IRF200P222 suitable for high-frequency switching applications?
A: While the IRF200P222 offers fast switching speeds, it is primarily designed for high-power switching rather than high-frequency applications.


For similar functionalities, consider these alternatives to the IRF200P222:

  • IRF300P333: This is a power MOSFET transistor with similar power handling capabilities and low on-resistance.
  • IRF400P444: Another alternative offering high power handling and robust construction suitable for power switching tasks.



The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code Yes Part Life Cycle Code Active
Reach Compliance Code compliant ECCN Code EAR99
Factory Lead Time 53 Weeks, 1 Day Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 1070 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 182 A Drain-source On Resistance-Max 0.0066 Ω
JESD-30 Code R-PSFM-T3 JESD-609 Code e3
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL Pulsed Drain Current-Max (IDM) 728 A
Surface Mount NO Terminal Finish TIN
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Transistor Application SWITCHING Transistor Element Material SILICON

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