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IRF1010NSPBF

IRF1010NSPBF is a MOSFET with a 55V rating, designed as a 1 N-CH HEXFET with a low on-state resistance of 11mOhms and a high gate charge of 80nC

Inventory:9,150

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Overview of IRF1010NSPBF

The IRF1010NSPBF is a power MOSFET transistor designed for high-current applications in power electronics and motor control systems. This MOSFET features a low on-state resistance and high switching speed, making it ideal for efficient power management and PWM control.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Gate (G): Control terminal for the MOSFET
  • Drain (D): Current carrying terminal

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRF1010NSPBF MOSFET for a visual representation.

Key Features

  • High Current Capability: The IRF1010NSPBF can handle high current loads, suitable for power electronics applications.
  • Low On-State Resistance: This MOSFET has a low RDS(on) value, resulting in minimal power dissipation and improved efficiency.
  • Fast Switching Speed: Offers high-speed switching characteristics for PWM control and motor drive applications.
  • Enhanced Thermal Performance: Designed for efficient heat dissipation to ensure reliable operation under high-load conditions.
  • Robust Construction: Built to withstand high voltages and currents, providing long-term durability in demanding environments.

Note: For detailed technical specifications, please refer to the IRF1010NSPBF datasheet.

Application

  • Power Electronics: Ideal for use in power supplies, inverters, and motor control circuits.
  • Motor Drive Systems: Suitable for driving DC motors and brushless DC motors with high efficiency.
  • Switching Circuits: Used in various switching applications requiring high-current capabilities and fast response times.

Functionality

The IRF1010NSPBF MOSFET provides a robust and efficient solution for power management and switching applications. Its high-current handling capacity and fast switching speed make it a versatile component in power electronics systems.

Usage Guide

  • Gate Control: Apply the appropriate voltage levels to the gate terminal for turning the MOSFET on and off.
  • Load Connection: Connect the load between the drain and source terminals to control the current flow.
  • Heat Dissipation: Ensure proper heat sinking to maintain the MOSFET within safe operating temperatures under high loads.

Frequently Asked Questions

Q: Is the IRF1010NSPBF suitable for PWM applications?
A: Yes, the fast switching speed of the IRF1010NSPBF makes it well-suited for Pulse Width Modulation (PWM) control in power electronics.

Equivalent

For similar functionalities, consider these alternatives to the IRF1010NSPBF:

  • IRF3205PBF: This power MOSFET offers comparable performance to the IRF1010NSPBF with variations in current handling and package.
  • IRF540NSPBF: A power MOSFET with similar characteristics to the IRF1010NSPBF, suitable for high-current applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case TO-252-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 55 V
Id - Continuous Drain Current 84 A Rds On - Drain-Source Resistance 11 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 4 V
Qg - Gate Charge 80 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 3.8 W
Channel Mode Enhancement Brand Infineon Technologies
Configuration Single Fall Time 48 ns
Forward Transconductance - Min 32 S Height 2.3 mm
Length 6.5 mm Product Type MOSFET
Rise Time 76 ns Factory Pack Quantity 1000
Subcategory MOSFETs Transistor Type 1 N-Channel
Type HEXFET Power MOSFET Typical Turn-Off Delay Time 39 ns
Typical Turn-On Delay Time 13 ns Width 6.22 mm
Part # Aliases SP001559426 Unit Weight 0.011640 oz

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Warranty, Returns, and Additional Information

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    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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IRF1010NSPBF

IRF1010NSPBF is a MOSFET with a 55V rating, designed as a 1 N-CH HEXFET with a low on-state resistance of 11mOhms and a high gate charge of 80nC

Inventory:

9,150
Overview of IRF1010NSPBF Specifications Warranty & Returns Similar Products Popular Products

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We provide an extended quality assurance period of 365 days for all components we offer. If a return or exchange becomes essential, kindly adhere to these guidelines:

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