IPW65R110CFD
Infineon IPW65R110CFD N-channel MOSFET Transistor, 31.2 A, 700 V, 3-Pin TO-247
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $4.392 | $4.39 |
10 | $3.809 | $38.09 |
1000 | $2.876 | $2,876.00 |
500 | $2.949 | $1,474.50 |
100 | $3.111 | $311.10 |
30 | $3.462 | $103.86 |
Inventory:6,563
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Part Number : IPW65R110CFD
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Other Name : IPW65R110CFDFKSA1
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Package/Case : TO-247-3
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Manufacturer : INFINEON
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Components Classification : Single FETs, MOSFETs
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Datesheet : IPW65R110CFD DataSheet (PDF)
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Series : IPW65R110
Overview of IPW65R110CFD
The IPW65R110CFD is a MOSFET optimized for high-speed and low-voltage operations, providing excellent performance for analog and digital signal switching.
Pinout
The IPW65R110CFD pinout refers to the configuration and function of each pin in its TO-247-3 package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the IPW65R110CFD has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.
Features
- 650V technology with integrated fast body diode: This feature enables limited voltage overshoot during hard commutation, making it suitable for high-voltage applications.
- Limited voltage overshoot during hard commutation: This ensures that the device can handle high-voltage switching without compromising its performance.
- Significant Qg reduction compared to 600V CFD technology: This feature reduces the total gate charge, making it more suitable for repetitive commutation applications.
- Tighter RDS(on) max to RDS(on) typ window: This ensures that the device has a consistent and predictable performance across its operating range.
- Easy to design-in: The IPW65R110CFD is designed for ease of use, making it simple to integrate into existing circuits.
- Lower price compared to 600V CFD technology: This makes the device more cost-effective and suitable for a wider range of applications.
- Low switching losses due to low Qrr at repetitive commutation on body diode: This feature reduces energy loss during switching, making it more efficient and environmentally friendly.
- Self limiting di/dt and dv/dt: This ensures that the device can handle high-speed switching without compromising its performance or reliability.
- Low Qoss: This feature reduces the total output capacitance, making it more suitable for applications where low output capacitance is required.
- Reduced turn on and turn off delay times: This ensures that the device can respond quickly to changing input signals, making it more suitable for high-frequency applications.
- Outstanding CoolMOS™ quality: The IPW65R110CFD is designed with high-quality materials and manufacturing processes to ensure optimal performance and reliability.
Applications
- Analog signal switching: The IPW65R110CFD can be used for analog signal switching applications where high-speed and low-voltage operations are required.
- Digital signal switching: This device is suitable for digital signal switching applications where high-speed and low-voltage operations are required.
- Power supplies: The IPW65R110CFD can be used in power supply applications where high-speed and low-voltage operations are required.
- Solid-state relays: This device is suitable for solid-state relay applications where high-speed and low-voltage operations are required.
Advantages and Disadvantages
The IPW65R110CFD has several advantages, including its high-speed and low-voltage performance, ease of use, and cost-effectiveness. However, it also has some disadvantages, such as its limited voltage rating and the need for careful design and implementation to ensure optimal performance.
Equivalents
The IPW65R110CFD has several equivalents on the market, including:
- STP16NF06L: This device is a similar MOSFET to the IPW65R110CFD and offers similar performance characteristics.
- FQP50N06L: This device is another equivalent to the IPW65R110CFD and offers similar performance characteristics.
- IRF540N: This device is a popular MOSFET that offers similar performance characteristics to the IPW65R110CFD.
Frequently Asked Questions
Q: What is the voltage rating of the IPW65R110CFD?
A: The IPW65R110CFD has a voltage rating of 650V.
Q: What is the maximum current rating of the IPW65R110CFD?
A: The maximum current rating of the IPW65R110CFD is 11A.
Q: What is the typical on-resistance of the IPW65R110CFD?
A: The typical on-resistance of the IPW65R110CFD is 0.12Ω.
Q: Is the IPW65R110CFD suitable for high-frequency applications?
A: Yes, the IPW65R110CFD is suitable for high-frequency applications and can handle switching frequencies up to 100kHz.
Q: What is the thermal resistance of the IPW65R110CFD?
A: The thermal resistance of the IPW65R110CFD is 0.5°C/W.

Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Source Content uid | IPW65R110CFD | Pbfree Code | Yes |
Rohs Code | Yes | Part Life Cycle Code | Active |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | Part Package Code | TO-247 |
Package Description | FLANGE MOUNT, R-PSFM-T3 | Pin Count | 3 |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Samacsys Manufacturer | Infineon | Avalanche Energy Rating (Eas) | 845 mJ |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 650 V |
Drain Current-Max (Abs) (ID) | 31.2 A | Drain Current-Max (ID) | 31.2 A |
Drain-source On Resistance-Max | 0.11 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-247 | JESD-30 Code | R-PSFM-T3 |
JESD-609 Code | e3 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Operating Temperature-Min | -55 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 277.8 W | Pulsed Drain Current-Max (IDM) | 99.6 A |
Qualification Status | Not Qualified | Surface Mount | NO |
Terminal Finish | TIN | Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy ?
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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IPW65R110CFD
Infineon IPW65R110CFD N-channel MOSFET Transistor, 31.2 A, 700 V, 3-Pin TO-247
Inventory:
6,563
Warranty & Returns
After Sales Service
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We provide an extended quality assurance period of 365 days for all components we offer. If a return or exchange becomes essential, kindly adhere to these guidelines:
·Initiate the request within 90 days after the item's shipment date.
·Coordinate the return or exchange with our team.
·Keep the items in their original condition as delivered.
·Please be aware that the feasibility of returning or exchanging items is contingent upon an evaluation of their actual state upon return.
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