• IPW65R110CFD TO-247-3
  • IPW65R110CFD
IPW65R110CFD TO-247-3
IPW65R110CFD

IPW65R110CFD

Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3

Inventory:6,563

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Overview of IPW65R110CFD

DescriptionCoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.Features• Ultra-fast body diode• Very high commutation ruggedness• Extremely low losses due to very low FOM Rdson^Qg and Eoss• Easy to use/drive​​​​​​​• Qualified for industrial grade applications according to JEDEC(J-STD20 and JESD22)• Pb-free plating, Halogen free mold compoundApplications 650V CoolMOS CFD2 is especially suitable for resonant switching PWM stages for e.g. PC Silverbox, LCT TV, Lighting, Server, Telecom and Solar.

IPW65R110CFD

Key Features

  • Ultra-fast body diode
  • Very high commutation ruggedness
  • Extremely low losses due to very low FOM Rdson^Qg and Eoss
  • Easy to use/drive
  • ​​​​​​​ Qualified for industrial grade applications according to JEDEC
  • (J-STD20 and JESD22)
  • Pb-free plating, Halogen free mold compound
IPW65R110CFD

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid IPW65R110CFD Pbfree Code Yes
Rohs Code Yes Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG Part Package Code TO-247
Package Description FLANGE MOUNT, R-PSFM-T3 Pin Count 3
Reach Compliance Code compliant ECCN Code EAR99
Samacsys Manufacturer Infineon Avalanche Energy Rating (Eas) 845 mJ
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 650 V
Drain Current-Max (Abs) (ID) 31.2 A Drain Current-Max (ID) 31.2 A
Drain-source On Resistance-Max 0.11 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247 JESD-30 Code R-PSFM-T3
JESD-609 Code e3 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style FLANGE MOUNT Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 277.8 W Pulsed Drain Current-Max (IDM) 99.6 A
Qualification Status Not Qualified Surface Mount NO
Terminal Finish TIN Terminal Form THROUGH-HOLE
Terminal Position SINGLE Transistor Application SWITCHING
Transistor Element Material SILICON

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