• IPW60R099P7XKSA1 Package
IPW60R099P7XKSA1 Package

IPW60R099P7XKSA1

In Stock:4,300

IPW60R099P7XKSA1 is a high-quality Single FETs, MOSFETs from INFINEON

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Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

functionalPacking TUBE msl NA
halogenFree yes customerInfo STANDARD
fgr Z79 productClassification ASP
productStatusInfo active and preferred hfgr E
packageName PG-TO247-3 pbFree yes
moistureProtPack NON DRY orderingCode SP001647038
fourBlockPackageName PG-TO247-3-41 rohsCompliant yes
opn IPW60R099P7XKSA1 completelyPbFree yes
sapMatnrSali SP001647038

Overview of IPW60R099P7XKSA1

The IPW60R099P7XKSA1 is a power MOSFET transistor designed for high-power switching applications in electronic circuits. It features a low on-state resistance and high current capability, making it suitable for use in power supplies, motor control, and other high-power applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Gate (G): Input for controlling the transistor switching.
  • Drain (D): Output terminal for the high power signal.
  • Source (S): Ground connection for the transistor.
  • Back-Source (BS): Back-side source connection for thermal management.
  • Voltage (V): Power supply input.

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IPW60R099P7XKSA1 MOSFET for a visual representation.

Key Features

  • High Power Handling: The IPW60R099P7XKSA1 can handle high power levels, making it suitable for demanding applications.
  • Low On-State Resistance: With a low RDS(on), the transistor minimizes power loss and heat generation during operation.
  • Fast Switching Speed: This MOSFET offers fast switching characteristics, enabling efficient power control.
  • Wide Voltage Range: Operates effectively within a wide voltage range, providing versatility in circuit design.
  • Thermal Management: The back-side source connection enhances thermal dissipation for improved performance.

Note: For detailed technical specifications, please refer to the IPW60R099P7XKSA1 datasheet.

Application

  • Power Supplies: Ideal for use in power supply units for efficient power distribution.
  • Motor Control: Suitable for motor control circuits in applications such as robotics and automation.
  • Inverter Systems: Used in inverter systems for converting DC power to AC power.

Functionality

The IPW60R099P7XKSA1 MOSFET transistor is designed to provide high-power switching capabilities with low on-state resistance, enabling efficient power control in various applications.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the gate pin for switching the transistor on and off.
  • Power Connections: Connect the drain and source pins to the load circuit for power transmission.
  • Thermal Considerations: Ensure proper thermal management to prevent overheating during operation.

Frequently Asked Questions

Q: Is the IPW60R099P7XKSA1 suitable for high-frequency switching applications?
A: Yes, the IPW60R099P7XKSA1 offers fast switching speeds, making it suitable for high-frequency applications.

Equivalent

For similar functionalities, consider these alternatives to the IPW60R099P7XKSA1:

  • IRF3205: A power MOSFET with comparable specifications for high-power applications.
  • IXFN38N100Q2: This MOSFET offers similar power handling capabilities and switching characteristics to the IPW60R099P7XKSA1.

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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IPW60R099P7XKSA1 Package

IPW60R099P7XKSA1

Power MOSFET featuring N-channel configuration, rated for voltages up to 600V and currents up to 31A, encapsulated in TO-247 packaging

Inventory:

4,300