• IPT015N10N5 HSOF-8
IPT015N10N5 HSOF-8

IPT015N10N5

Ideal for high-frequency switching applications due to its fast switching speed

Quantity Unit Price(USD) Ext. Price
1 $2.636 $2.64
10 $2.362 $23.62
30 $1.887 $56.61
100 $1.710 $171.00
500 $1.629 $814.50
1000 $1.596 $1,596.00

Inventory:6,259

*The price is for reference only.
  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for IPT015N10N5 using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of IPT015N10N5

The IPT015N10N5 is a Power MOSFET transistor designed for use in switching applications.This N-channel MOSFET features a low on-state resistance and high switching speed,making it ideal for power management in various electronic circuits.

Pinout

(Note:The pin configuration below is a general representation.For precise details,refer to the specific datasheet.)

  • G:Gate
  • D:Drain
  • S:Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IPT015N10N5 MOSFET for a visual representation.

Key Features

  • Low On-State Resistance:The IPT015N10N5 offers low on-state resistance,allowing efficient power flow with minimal losses.
  • High Switching Speed:This MOSFET provides fast switching times,essential for high-frequency applications.
  • High Current Handling Capacity:With its robust design,the IPT015N10N5 can handle significant current levels,ideal for power circuits.
  • Temperature Stability:Designed to operate reliably across a wide temperature range for consistent performance.
  • ESD Protection:Includes built-in electrostatic discharge protection for enhanced reliability.

Note:For detailed technical specifications,please refer to the IPT015N10N5 datasheet.

Application

  • Switching Circuits:Ideal for use in switching circuits to control power flow in various electronic devices.
  • Power Supplies:Suitable for power supply applications where efficient power management is required.
  • Motor Control:Used in motor control applications to regulate the speed and direction of motors.

Functionality

The IPT015N10N5 Power MOSFET is designed to efficiently switch high currents and handle power management tasks in electronic circuits.It provides reliable and robust performance for a variety of applications.

Usage Guide

  • Gate Voltage:The gate of the IPT015N10N5 should be driven with the appropriate voltage to control the switching operation.
  • Drain-Source Connection:Connect the load or circuit to the drain and source terminals of the MOSFET for power switching.
  • Voltage Ratings:Ensure that the drain-source voltage and current ratings are not exceeded to prevent device damage.

Frequently Asked Questions

Q:Does the IPT015N10N5 require a heat sink for operation?
A:Depending on the application and power dissipation,the IPT015N10N5 may require a heat sink for thermal management.

Equivalent

For alternatives with similar capabilities, consider the following:

  • IRF3205: A Power MOSFET offering comparable performance to the IPT015N10N5 with slightly different specifications.
  • SiHG30N60E: This N-channel MOSFET provides similar functionality to the IPT015N10N5 and is suitable for power switching applications.

IPT015N10N5

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid IPT015N10N5 Rohs Code Yes
Part Life Cycle Code Active Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-F8 Reach Compliance Code compliant
ECCN Code EAR99 Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 652 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 32 A Drain-source On Resistance-Max 0.0015 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JESD-30 Code R-PSSO-F8
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 8
Operating Mode ENHANCEMENT MODE Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL Pulsed Drain Current-Max (IDM) 1200 A
Surface Mount YES Terminal Finish TIN
Terminal Form FLAT Terminal Position SINGLE
Transistor Application SWITCHING Transistor Element Material SILICON

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

FP1189-G

FP1189-G

FP1189-G RF JFET Transistors for frequencies ranging from 50 to 4000MHz
DMP4025SFG-13

DMP4025SFG-13

DMP4025SFG-13 P-Channel MOSFET PowerDI3333-8: This component offers a voltage rating of 40V and a current capacity of 4
MW7IC2425NBR1

MW7IC2425NBR1

NBR1, MW7IC2425 Silicon S Band RF Power MOSFET
MAC4DSMT4G

MAC4DSMT4G

TRIAC with 3-Pin DPAK packaging, rated at 600V and 40A
IXTM24N50

IXTM24N50

3-pin TO-204AE Silicon MOSFET in N-channel configuration with maximum ratings of 500V and 24A
SIRA20DP-T1-RE3

SIRA20DP-T1-RE3

25V MOSFETs with 0.58mΩ resistance at 20A and 10V gate threshold at 250uA in SO-8 package