IPP65R190CFD

Overview of IPP65R190CFD

The Infineon Technologies IPP65R190CFD is a N-Channel MOSFET Transistor optimized for high-speed and low-voltage operations. It provides excellent performance for analog and digital signal switching.

Pinout

The IPP65R190CFD pinout refers to the configuration and function of each pin in its TO-220 package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the IPP65R190CFD has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

• 650V technology with integrated fast body diode: This feature enables limited voltage overshoot during hard commutation, making it suitable for high-voltage applications.
• Limited voltage overshoot during hard commutation: This ensures that the device can handle high-voltage switching without compromising its performance.
• Significant Qg reduction compared to 600V CFD technology: This feature reduces the total gate charge, making it more efficient and suitable for high-frequency applications.
• Tighter RDS(on) max to RDS(on) typ window: This ensures that the device has a consistent and predictable performance across its operating range.
• Easy to design-in: The IPP65R190CFD is designed for ease of use, making it simple to integrate into existing circuits.
• Lower price compared to 600V CFD technology: This makes the device more affordable and accessible for a wider range of applications.
• Low switching losses due to low Qrr at repetitive commutation on body diode: This feature reduces energy loss during switching, making it suitable for high-frequency applications.
• Self limiting di/dt and dv/dt: This ensures that the device can handle high-speed switching without compromising its performance.
• Low Qoss: This feature reduces energy loss during switching, making it suitable for high-frequency applications.
• Reduced turn on and turn off delay times: This ensures that the device can handle high-speed switching without compromising its performance.
• Outstanding CoolMOS™ quality: The IPP65R190CFD is designed to meet the highest standards of quality, making it suitable for a wide range of applications.

Applications

• Analog and digital signal switching: The IPP65R190CFD is suitable for high-speed analog and digital signal switching applications.
• Pulse-width modulation (PWM) control: This device can be used to control PWM signals in power electronic applications.
• Power conversion and conditioning: The IPP65R190CFD is suitable for power conversion and conditioning applications, such as DC-DC converters and AC-DC converters.
• Solar inverters and grid tie systems: This device can be used in solar inverters and grid tie systems to control the flow of energy.

Advantages and Disadvantages

The IPP65R190CFD has several advantages, including its high-speed switching capabilities, low power loss, and ease of use. However, it also has some disadvantages, such as its limited voltage rating and relatively high gate charge.

Equivalents

The IPP65R190CFD is equivalent to other N-Channel MOSFET Transistors with similar specifications and features. Some examples include the STP65NF60L, the IRF640, and the FQP50N60C.