• IPD50R500CE PG-TO252-3-344
IPD50R500CE PG-TO252-3-344

IPD50R500CE

IPD50R500 - 500V COOLMOS N-CHANN

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Overview of IPD50R500CE

IntroductionThe new CoolMOSTM CE is the fourth technology platform of Infineon’s market leading high voltage power MOSFETs designed according to the revolutionary superjunction (SJ) principle in the 500V class. 500V CE portfolio provides all benefits of a fast switching superjunction (SJ) MOSFET while keeping ease of use and implementation. The complete CE series of MOSFETs achieve very low conduction and switching losses, and can make applications more efficient, more compact, lighter and thermally cooler.This application note will describe the fundamental differences between a SJ MOSFET and a standard MOSFET. Additionally, all features and benefits impacting the target applications will be described. Furthermore, these features will be illustrated from both a theoretical point of view and in hardware measurements. It will also be shown that CoolMOSTM CE is a cost effective alternative compared to standard MOSFETs, which enables reaching higher efficiency levels while offering an attractive price/performance ratio.FEATURES Reduced energy stored in output capacitance (Eoss) High body diode ruggedness Reduced reverse recovery charge (Qrr) Reduced gate charge (Qg) Overall FeaturesBENEFITS Reduction of switching losses, improvement of light load efficiency Higher reliability under critical operating conditions Lower possibility of hard commutation in resonant topologies Improvement in light load efficiency Lower gate drive capability required Easy control of switching behavior Outstanding reliability with proven CoolMOSTM qualityApplicationsPC Silverbox LCD/LED/PDP TV Gaming Lighting

IPD50R500CE

Key Features

  • Reduced energy stored in output capacitance (Eoss)
  • High body diode ruggedness
  • Reduced reverse recovery charge (Qrr)
  • Reduced gate charge (Qg)
  • Overall Features
  • BENEFITS
  • Reduction of switching losses, improvement of light load efficiency
  • Higher reliability under critical operating conditions
  • Lower possibility of hard commutation in resonant topologies
  • Improvement in light load efficiency
  • Lower gate drive capability required
  • Easy control of switching behavior
  • Outstanding reliability with proven CoolMOSTM quality

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Mfr Infineon Technologies
Series CoolMOS CE™ Package Bulk
Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 7.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 13V
Rds On (Max) @ Id, Vgs 500mOhm @ 2.3A, 13V Vgs(th) (Max) @ Id 3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 18.7 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 433 pF @ 100 V FET Feature -
Power Dissipation (Max) 57W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package PG-TO252-3-344
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

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