IPD50P04P4L-11
TO-252-3L IPD50P04P4L-11 MOSFETs ROHS
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $0.448 | $0.45 |
10 | $0.366 | $3.66 |
30 | $0.325 | $9.75 |
100 | $0.285 | $28.50 |
500 | $0.261 | $130.50 |
1000 | $0.247 | $247.00 |
Inventory:5,325
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Part Number : IPD50P04P4L-11
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Other Name : IPD50P04P4L11ATMA1
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Package/Case : TO-252-3
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Manufacturer : INFINEON
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Components Classification : Single FETs, MOSFETs
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Datesheet : IPD50P04P4L-11 DataSheet (PDF)
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Series : IPD50
The IPD50P04P4L-11 is a power MOSFET designed for use in high-current, high-speed switching applications. It features a low on-state resistance and a rugged design, making it suitable for power management and motor control applications. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the IPD50P04P4L-11 MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the IPD50P04P4L-11 datasheet. Functionality The IPD50P04P4L-11 power MOSFET is designed to efficiently control and switch high currents in various power and motor control applications. Its low on-state resistance and fast switching speed make it a reliable component for power management systems. Usage Guide Q: Is the IPD50P04P4L-11 suitable for automotive applications? For similar functionalities, consider these alternatives to the IPD50P04P4L-11:Overview of IPD50P04P4L-11
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the rugged design and high current capability make the IPD50P04P4L-11 suitable for automotive power management and motor control applications.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
RthJC max | 2.6 K/W | Ptot max | 58.0 W |
IDpuls max | -200.0 A | Qualification | Automotive |
Package | DPAK (PG-TO252-3) | VDS max | -40.0 V |
ID max | -50.0 A | VGS(th) min | -1.2 V |
Polarity | P | RDS (on) max | 10.6 mΩ |
VGS(th) max | -2.2 V | QG max | 45.0 nC |
Technology | OptiMOS™-P2 | Operating Temperature max | 175.0 °C |
Operating Temperature min | -55.0 °C |
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