• IPD50N04S4-08
IPD50N04S4-08

IPD50N04S4-08

40V 50A High Current MOSFET

Quantity Unit Price(USD) Ext. Price
1000 $0.387 $387.00
100 $0.436 $43.60
30 $0.491 $14.73
10 $0.545 $5.45
1 $0.655 $0.66
500 $0.404 $202.00

Inventory:7,536

*The price is for reference only.
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Submit your quote request for IPD50N04S4-08 using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of IPD50N04S4-08

The IPD50N04S4-08 is a MOSFET optimized for high-speed and low-voltage operations. It provides excellent performance for analog and digital signal switching.

Pinout

The IPD50N04S4-08 pinout refers to the configuration and function of each pin in its DPAK (PG-TO252-3) package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the IPD50N04S4-08 has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • N-channel - Enhancement mode: This feature allows for high-speed switching and low-voltage operations.
  • Automotive AEC Q101 qualified: The IPD50N04S4-08 meets the requirements of the automotive industry's highest quality standards.
  • MSL1 up to 260°C peak reflow: This feature enables the component to withstand high temperatures during manufacturing processes.
  • 175°C operating temperature: The IPD50N04S4-08 can operate reliably at high temperatures, making it suitable for various applications.
  • Green Package (RoHS compliant): The package is environmentally friendly and free from hazardous substances like lead, mercury, and cadmium.
  • 100% Avalanche tested: All units are tested to ensure they can withstand the stress of operating in extreme conditions.
  • Low switching and conduction power losses for highest thermal efficiency: The component's design minimizes energy waste, resulting in a more efficient system.
  • Robust packages with superior quality and reliability: The DPAK package ensures optimal performance and longevity of the IPD50N04S4-08.
  • Optimized total gate charge enables smaller driver output stages: This feature helps reduce power consumption and minimize heat generation in the system.

Applications

  • None specified: The IPD50N04S4-08 can be used in various applications that require high-speed switching and low-voltage operations. Potential areas include automotive, industrial control systems, and power supplies.

Advantages and Disadvantages

Advantages

  • High-speed switching capabilities: The IPD50N04S4-08 is designed to quickly switch signals at low voltages, making it suitable for high-frequency applications.
  • Automotive-grade quality: Meeting the stringent requirements of AEC Q101 ensures the component's reliability and performance in harsh automotive environments.

Disadvantages

  • Limited pinout details available: While the IPD50N04S4-08 has a well-designed package, some detailed information regarding each pin's function might be limited to the datasheet provided by the manufacturer.

Equivalents

For similar functionalities, consider these alternatives to the IPD50N04S4-08:

  • N/A: The IPD50N04S4-08 is a unique product with proprietary features and specifications.

IPD50N04S4-08

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid IPD50N04S4-08 Pbfree Code Yes
Rohs Code Yes Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG Part Package Code TO-252
Package Description SMALL OUTLINE, R-PSSO-G2 Pin Count 4
Reach Compliance Code not_compliant ECCN Code EAR99
Factory Lead Time 52 Weeks Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 55 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 40 V
Drain Current-Max (Abs) (ID) 50 A Drain Current-Max (ID) 50 A
Drain-source On Resistance-Max 0.0079 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252 JESD-30 Code R-PSSO-G2
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 2
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 46 W
Pulsed Drain Current-Max (IDM) 200 A Qualification Status Not Qualified
Surface Mount YES Terminal Finish TIN
Terminal Form GULL WING Terminal Position SINGLE
Transistor Element Material SILICON Manufacturer Infineon
Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case TO-252-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 40 V
Id - Continuous Drain Current 50 A Rds On - Drain-Source Resistance 7.2 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 22.4 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 46 W
Channel Mode Enhancement Qualification AEC-Q101
Tradename OptiMOS Series OptiMOS-T2
Brand Infineon Technologies Fall Time 6 ns
Height 2.3 mm Length 6.5 mm
Product Type MOSFET Rise Time 7 ns
Factory Pack Quantity 2500 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 5 ns
Typical Turn-On Delay Time 5 ns Width 6.22 mm
Part # Aliases IPD5N4S48XT SP000711450 IPD50N04S408ATMA1 Unit Weight 0.011640 oz

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IPD50N04S4-08

40V 50A High Current MOSFET

Inventory:

7,536