• IPB027N10N5 TO-263-3
IPB027N10N5 TO-263-3

IPB027N10N5

Robust and durable component for demanding industrial power systems

Quantity Unit Price(USD) Ext. Price
1 $4.315 $4.32
10 $3.767 $37.67
30 $3.443 $103.29
100 $3.114 $311.40
500 $2.963 $1,481.50
1000 $2.895 $2,895.00

Inventory:4,912

*The price is for reference only.
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Overview of IPB027N10N5

Infineon's IPB027N10N5 OptiMOS™ 5 100V power MOSFET is a game-changer for telecom and server power applications. Its low on-state resistance is a significant contributor to its industry-leading figure of merit (FOM), providing the highest level of power density and efficiency. This makes it ideal for synchronous rectification, Or-ing, hotswap, and battery protection in telecom blocks, as well as for server power supply applications

IPB027N10N5

Key Features

  • Ideal for high frequency switching and sync. rec.
  • Excellent gate charge x RDS(on) product (FOM)
  • Very low on-resistance  RDS(on)
  • N-channel, normal level
  • 100% avalanche tested
  • ​​​​​​​ Pb-free plating; RoHS compliant
  • Qualified according to JEDEC1)  for target applications
  • Halogen-free according to IEC61249-2-21

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid IPB027N10N5 Rohs Code Yes
Part Life Cycle Code Active Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G2 Reach Compliance Code compliant
ECCN Code EAR99 Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 461 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 120 A Drain-source On Resistance-Max 0.0027 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 2 Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 480 A Surface Mount YES
Terminal Finish TIN Terminal Form GULL WING
Terminal Position SINGLE Transistor Application SWITCHING
Transistor Element Material SILICON

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    Returns for refund: within 90 days

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