• IPB027N10N5 TO-263-3
IPB027N10N5 TO-263-3


Power Field-Effect Transistor, 120A I(D), 100V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2


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Overview of IPB027N10N5


Key Features

  • Ideal for high frequency switching and sync. rec.
  • Excellent gate charge x RDS(on) product (FOM)
  • Very low on-resistance  RDS(on)
  • N-channel, normal level
  • 100% avalanche tested
  • ​​​​​​​ Pb-free plating; RoHS compliant
  • Qualified according to JEDEC1)  for target applications
  • Halogen-free according to IEC61249-2-21




The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid IPB027N10N5 Rohs Code Yes
Part Life Cycle Code Active Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G2 Reach Compliance Code compliant
ECCN Code EAR99 Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 461 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 120 A Drain-source On Resistance-Max 0.0027 Ω
JESD-30 Code R-PSSO-G2 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 2 Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 480 A Surface Mount YES
Terminal Finish TIN Terminal Form GULL WING
Terminal Position SINGLE Transistor Application SWITCHING
Transistor Element Material SILICON

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