IPB019N08N3G

Overview of IPB019N08N3G

The IPB019N08N3G is a Power Field-Effect Transistor optimized for high-speed and low-voltage operations. It provides excellent performance for analog and digital signal switching.

Pinout

The IPB019N08N3G pinout refers to the configuration and function of each pin in its TO-263-7 package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the IPB019N08N3G has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

• Optimized technology for DC-DC converters: The IPB019N08N3G is designed to provide excellent performance in DC-DC converter applications, offering high efficiency and reliability.
• Excellent gate charge x R _DS(ON) product (FOM): This feature ensures that the transistor operates efficiently with low power consumption.
• Superior thermal resistance: The IPB019N08N3G has a high thermal resistance, making it suitable for applications where heat dissipation is critical.
• Dual sided cooling: This feature allows for efficient heat dissipation from both sides of the transistor, ensuring reliable operation in harsh environments.
• Low parasitic inductance: The IPB019N08N3G has a low parasitic inductance, making it suitable for high-frequency applications where inductance can cause signal degradation.
• Low profile (<0.7mm): This feature makes the IPB019N08N3G ideal for applications where space is limited, such as in portable devices or automotive systems.
• N-channel, normal level: The IPB019N08N3G operates at a normal voltage level, making it suitable for general-purpose applications.
• 100% avalanche tested: This feature ensures that the transistor can withstand high-energy pulses without failing.
• Pb-free plating; RoHS compliant: The IPB019N08N3G is manufactured using lead-free materials, making it compliant with RoHS (Restriction of Hazardous Substances) regulations.

Applications

• Analog and digital signal switching: The IPB019N08N3G is suitable for applications where high-speed analog or digital signals need to be switched on and off.
• DC-DC converters: This transistor is designed for use in DC-DC converter applications, offering high efficiency and reliability.
• Power supplies: The IPB019N08N3G can be used in power supply applications where high current and low voltage are required.
• Automotive systems: This transistor is suitable for use in automotive systems where high-reliability and high-performance are critical.

Equivalents

The IPB019N08N3G is equivalent to other power field-effect transistors with similar specifications, such as the STP16NF06L or the NXP BUK212-50A.

Frequently Asked Questions

Q: What is the maximum current rating of the IPB019N08N3G?
A: The maximum current rating of the IPB019N08N3G is 12 A.

Q: What is the maximum voltage rating of the IPB019N08N3G?
A: The maximum voltage rating of the IPB019N08N3G is 60 V.

Q: Is the IPB019N08N3G RoHS compliant?
A: Yes, the IPB019N08N3G is manufactured using lead-free materials and is RoHS compliant.

Q: What is the thermal resistance of the IPB019N08N3G?
A: The thermal resistance of the IPB019N08N3G is 0.5°C/W.