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IHW25N120R2

IGBT rated for 1200 volts and 50 amps, featuring reverse conduction capabilities

Quantity Unit Price(USD) Ext. Price
1000 $1.075 $1,075.00
500 $1.102 $551.00
100 $1.163 $116.30
30 $1.301 $39.03
10 $1.436 $14.36
1 $1.650 $1.65

Inventory:3,880

*The price is for reference only.
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Overview of IHW25N120R2

The IHW25N120R2 is a 1200V, 25A IGBT (Insulated Gate Bipolar Transistor) designed for high-power switching applications.This IGBT offers low saturation voltage and high switching speed,making it suitable for inverters,motor control,and power supply applications.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • Collector (C):Current Terminal
  • Emitter (E):Emitter Terminal
  • GATE:Gate Terminal for Control Signal
  • NC:No Connection
  • NC:No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IHW25N120R2 IGBT for a visual representation.

Key Features

  • High Voltage Rating:1200V voltage rating suitable for high-power applications.
  • High Current Capability:25A continuous collector current for efficient power handling.
  • Low Saturation Voltage:Low voltage drop during operation for reduced power dissipation.
  • Fast Switching Speed:High switching speed for improved efficiency in switching applications.
  • Robust and Reliable:Designed for reliable performance in demanding environments.

Note:For detailed technical specifications,please refer to the IHW25N120R2 datasheet.

Application

  • Power Inverters:Ideal for use in power inverters for converting DC to AC power.
  • Motor Control:Suitable for motor control applications requiring high-power switching.
  • Power Supplies:Used in power supply units for efficient power management.

Functionality

The IHW25N120R2 is an Insulated Gate Bipolar Transistor designed for high-power switching applications.It offers low saturation voltage and high speed,ensuring reliable performance in various power electronics applications.

Usage Guide

  • Collector Connection:Connect the load between Collector (C) and Emitter (E) terminals.
  • Gate Control:Apply control signals to the GATE terminal to switch the IGBT ON and OFF.

Frequently Asked Questions

Q:What is the maximum voltage rating of the IHW25N120R2?
A:The IHW25N120R2 has a maximum voltage rating of 1200V.

Q:Can the IHW25N120R2 handle high current loads?
A:Yes,the IHW25N120R2 is capable of handling continuous collector currents up to 25A.

Equivalent

For similar functionalities,consider these alternatives to the IHW25N120R2:

  • IRG4BC30UD:Another high-voltage IGBT with similar current and voltage ratings for power applications.
  • FF150R12RT4:This IGBT provides comparable characteristics to the IHW25N120R2 for high-power switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid IHW25N120R2 Pbfree Code Yes
Rohs Code Yes Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG Part Package Code TO-247AC
Package Description FLANGE MOUNT, R-PSFM-T3 Pin Count 3
Reach Compliance Code compliant ECCN Code EAR99
Samacsys Manufacturer Infineon Case Connection COLLECTOR
Collector Current-Max (IC) 50 A Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE Gate-Emitter Thr Voltage-Max 6.4 V
Gate-Emitter Voltage-Max 20 V JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3 Number of Elements 1
Number of Terminals 3 Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style FLANGE MOUNT Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 365 W
Qualification Status Not Qualified Surface Mount NO
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Application POWER CONTROL
Transistor Element Material SILICON Turn-off Time-Nom (toff) 463.6 ns

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Warranty, Returns, and Additional Information

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    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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IHW25N120R2

IGBT rated for 1200 volts and 50 amps, featuring reverse conduction capabilities

Inventory:

3,880