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HV7355K6-G

Transmitter 1TX 56-Pin QFN EP Tray

Inventory:6,610

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Overview of HV7355K6-G

The HV7355K6-G is a high-voltage, high-current MOSFET driver IC designed for driving N-channel power MOSFETs and IGBTs in high-power applications. It offers a robust and efficient solution for controlling power devices in various power electronics systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • VCC: Positive Power Supply
  • GND: Ground
  • VLO: Low-Side Gate Driver Output
  • VHO: High-Side Gate Driver Output
  • VCCP: Bootstrap Power Supply
  • SD: Shutdown Pin
  • UV: Undervoltage Lockout
  • OV: Overvoltage Protection
  • SDGND: Shutdown Ground
  • PGND: Power Ground


Circuit Diagram

Include a detailed circuit diagram showcasing the connections and operation of the HV7355K6-G IC for a visual representation.

Key Features

  • High-Voltage, High-Current Capability: The HV7355K6-G is capable of driving N-channel power MOSFETs and IGBTs in high-power applications.
  • Bootstrap Power Supply: Includes provisions for a bootstrap power supply for high-side gate driver operation.
  • Shutdown Functionality: Features a shutdown pin for enabling or disabling the device as needed.
  • Undervoltage Lockout and Overvoltage Protection: Provides protection features for safe operation in varying voltage conditions.
  • Compact Package: Available in a space-saving and thermally efficient package suitable for power electronics applications.

Note: For comprehensive technical specifications, kindly refer to the HV7355K6-G datasheet.

Application

  • Power Electronics Systems: Ideal for driving power MOSFETs and IGBTs in high-power applications such as motor control, power supplies, and inverters.
  • Switching Power Supplies: Suitable for use in switching power supply applications requiring high-voltage and high-current drive capabilities.
  • Motor Drives: Used in motor drive systems for efficient and reliable control of motor operation.

Functionality

The HV7355K6-G MOSFET driver IC provides high-voltage and high-current drive capabilities for N-channel power devices, enabling efficient and precise control in power electronics applications.

Usage Guide

  • Power Supply: Connect VCC (Pin 1) to the positive power supply and GND (Pin 2) to the ground reference.
  • Gate Driver Connections: Interface the low-side and high-side gate driver outputs (VLO and VHO) to the respective MOSFET or IGBT gates.
  • Control Signals: Utilize the shutdown pin (SD, Pin 6) to control the device's operational state.

Frequently Asked Questions

Q: Is the HV7355K6-G suitable for driving IGBTs?
A: Yes, the HV7355K6-G is designed to drive both N-channel power MOSFETs and IGBTs in high-power applications.

Q: How does the shutdown function work on the HV7355K6-G?
A: The shutdown pin (SD) allows users to easily enable or disable the device, providing control over the driver's operation.

Equivalent

For similar functionality, consider these alternatives to the HV7355K6-G:

  • IX4426N: A high-voltage MOSFET and IGBT driver IC with similar specifications and features.
  • IR2184: This is a high-voltage half-bridge driver IC suitable for driving power switches in various high-power applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category RF Front End RoHS Details
Operating Supply Voltage 5 V Operating Supply Current 50 uA
Maximum Operating Temperature + 125 C Mounting Style SMD/SMT
Package / Case QFN-56 Brand Microchip Technology
Minimum Operating Temperature - 40 C Moisture Sensitive Yes
Product Type RF Front End Factory Pack Quantity 250
Subcategory Wireless & RF Integrated Circuits Technology Si
Unit Weight 0.006751 oz

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packageimg

HV7355K6-G

Transmitter 1TX 56-Pin QFN EP Tray

Inventory:

6,610