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HUF75321S3S

HUF75321S3S is an N-Channel UltraFET MOSFET with a 20A and 55V rating

Quantity Unit Price(USD) Ext. Price
1 $0.431 $0.43
200 $0.167 $33.40
500 $0.161 $80.50
1000 $0.158 $158.00

Inventory:5,754

*The price is for reference only.
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Overview of HUF75321S3S

The HUF75321S3S is a N-Channel UltraFET Power MOSFET, designed to offer high power handling capabilities and low on-resistance, making it suitable for various power management applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • 1: Gate
  • 2: Source
  • 3: Drain
  • 4: Source
  • 5: Drain
  • 6: Gate

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the HUF75321S3S MOSFET for a visual representation.

Key Features

  • High Power Handling: The HUF75321S3S MOSFET is capable of handling high power levels, making it suitable for power management applications.
  • Low On-Resistance: With low on-resistance, this MOSFET minimizes power loss and heat generation during operation.
  • Fast Switching Speed: It offers fast switching characteristics, allowing for efficient power control and regulation.
  • Robust Construction: The UltraFET technology provides robust and reliable performance in demanding environments.
  • Enhanced Thermal Performance: The MOSFET is designed to facilitate efficient heat dissipation for improved thermal management.

Note: For detailed technical specifications, please refer to the HUF75321S3S datasheet.

Application

  • Power Supplies: Ideal for use in power supply units for efficient power regulation and control.
  • Motor Control: Suitable for motor control applications, providing high power handling and efficient switching.
  • Inverters and Converters: Used in inverters and DC-DC converters for power management and conversion.

Functionality

The HUF75321S3S is a robust N-Channel UltraFET Power MOSFET designed to handle high power with low on-resistance, making it an essential component for power management and regulation in various applications.

Usage Guide

  • Gate Connection: Connect the Gate pins to the driving circuit for controlling the power flow.
  • Source and Drain: Connect the Source and Drain pins as per the circuit requirements for power regulation.
  • Heat Dissipation: Ensure proper heat sinking and thermal management for efficient operation and reliability.

Frequently Asked Questions

Q: Can the HUF75321S3S be used in automotive applications?
A: Yes, the HUF75321S3S is suitable for automotive power management and control due to its robust construction and high power handling capabilities.

Equivalent

For similar functionalities, consider these alternatives to the HUF75321S3S:

  • IRF1010EZ: A similar N-Channel Power MOSFET designed for high power handling and low on-resistance.
  • FQP30N06L: This MOSFET offers comparable power handling and switching characteristics to the HUF75321S3S.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code Yes Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC Reach Compliance Code
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V Drain Current-Max (ID) 35 A
Drain-source On Resistance-Max 0.034 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB JESD-30 Code R-PSSO-G2
JESD-609 Code e3 Moisture Sensitivity Level NOT APPLICABLE
Number of Elements 1 Number of Terminals 2
Operating Mode ENHANCEMENT MODE Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT APPLICABLE Polarity/Channel Type N-CHANNEL
Qualification Status COMMERCIAL Surface Mount YES
Terminal Finish MATTE TIN Terminal Form GULL WING
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE
Transistor Application SWITCHING Transistor Element Material SILICON

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