• HMC788ALP2E CP-6-10
HMC788ALP2E CP-6-10

HMC788ALP2E

Part number: HMC788ALP2E, Package type: LFCSP-6, Temperature range: -40 to 85

Inventory:9,082

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Overview of HMC788ALP2E

The HMC788ALP2E is a GaAs pHEMT MMIC Low Noise Amplifier that operates from 5 GHz to 7 GHz. It features high gain, low noise figure, and excellent linearity, making it suitable for a wide range of RF and microwave applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Vdd: Positive power supply
  • GND: Ground connection
  • Vbias: Bias voltage connection
  • RFin: RF input
  • RFout: RF output

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the HMC788ALP2E for a visual representation.

Key Features

  • Wide Frequency Range: Operates from 5 GHz to 7 GHz, suitable for various RF and microwave applications.
  • High Gain: Provides high gain to amplify weak signals effectively.
  • Low Noise Figure: Features a low noise figure for improved signal-to-noise performance.
  • Excellent Linearity: Offers excellent linearity to maintain signal integrity in high-frequency systems.
  • GaAs pHEMT Technology: Utilizes GaAs pHEMT technology for high performance and reliability.

Note: For detailed technical specifications, please refer to the HMC788ALP2E datasheet.

Application

  • Wireless Communication Systems: Ideal for use in wireless communication systems requiring low noise amplification.
  • Radar Systems: Suitable for radar systems that demand high gain and signal integrity.
  • Satellite Communication: Used in satellite communication systems for signal amplification in the 5-7 GHz range.

Functionality

The HMC788ALP2E is a high-performance Low Noise Amplifier designed to amplify RF signals in the 5-7 GHz frequency range with low noise figure and high linearity, ensuring reliable signal amplification.

Usage Guide

  • Power Supply: Connect Vdd (Pin 1) to the positive power supply voltage.
  • RF Connections: Connect the RFin (Pin 4) to the RF input source and RFout (Pin 5) to the RF output destination.
  • Biasing: Apply the bias voltage Vbias (Pin 3) within the specified range for optimal performance.

Frequently Asked Questions

Q: What is the typical gain of the HMC788ALP2E?
A: The HMC788ALP2E typically provides a gain of X dB across its operating frequency range.

Q: Is the HMC788ALP2E suitable for high-frequency satellite applications?
A: Yes, the HMC788ALP2E is designed for operation in the 5-7 GHz range, making it suitable for high-frequency satellite communication systems.

Equivalent

For similar functionalities, consider these alternatives to the HMC788ALP2E:

  • HMC-C076: A GaAs pHEMT MMIC LNA operating in a similar frequency range with comparable specifications.
  • HMC789LP4E: Another low noise amplifier IC from Hittite Microwave offering similar performance in the 5-7 GHz range.

HMC788ALP2E

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category RF Amplifier RoHS Details
Operating Frequency 10 MHz to 10 GHz Operating Supply Voltage 4.5 V to 5.5 V
Operating Supply Current 87 mA Gain 14 dB
NF - Noise Figure 6 dB Type Gain Block Amplifiers
Mounting Style SMD/SMT Package / Case DFN-EP-6
Technology GaAs P1dB - Compression Point 20 dBm
OIP3 - Third Order Intercept 33 dBm Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C Series HMC788
Brand Analog Devices Moisture Sensitive Yes
Number of Channels 1 Channel Product Type RF Amplifier
Factory Pack Quantity 500 Subcategory Wireless & RF Integrated Circuits
Supply Voltage - Max 5.5 V Supply Voltage - Min 4.5 V
Test Frequency 10 MHz to 6 GHz Unit Weight 0.000847 oz

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HMC788ALP2E

Part number: HMC788ALP2E, Package type: LFCSP-6, Temperature range: -40 to 85

Inventory:

9,082