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HMC349AMS8GE

RF Switch SPDT 100MHz to 4GHz 42dB 8-Pin MSOP EP T/R

Inventory:6,801

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Overview of HMC349AMS8GE

The HMC349AMS8GE is a high-performance RF switch optimized for nonreflective, 50 Ω design with high isolation and low insertion loss. It provides excellent performance for mobile devices, testing tools, 4G networks, radio systems, cellular tech, and wireless gear.

Pinout

The HMC349AMS8GE pinout refers to the configuration and function of each pin in its SOP-8 package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the HMC349AMS8GE has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • Nonreflective, 50 Ω design: The HMC349AMS8GE features a nonreflective, 50 Ω design that minimizes signal reflections and ensures optimal performance in RF applications.
  • High isolation: 57 dB to 2 GHz: This high-performance RF switch offers high isolation of up to 57 dB from 100 MHz to 2 GHz, making it suitable for demanding RF applications.
  • Low insertion loss: 0.9 dB to 2 GHz: The HMC349AMS8GE features a low insertion loss of 0.9 dB from 100 MHz to 2 GHz, ensuring minimal signal degradation and optimal performance in RF applications.
  • High input linearity: The HMC349AMS8GE offers high input linearity with a 1 dB power compression (P1dB) of 34 dBm typical and a third-order intercept (IP3) of 52 dBm typical, making it suitable for demanding RF applications.
  • High power handling: The HMC349AMS8GE can handle high powers with a through path of up to 33.5 dBm and a terminated path of up to 26.5 dBm, making it suitable for demanding RF applications.

Applications

  • Mobile devices: The HMC349AMS8GE is suitable for use in mobile devices such as smartphones and tablets that require high-performance RF switching.
  • Testing tools: This high-performance RF switch is also suitable for use in testing tools and equipment that require high isolation and low insertion loss.
  • 4G networks: The HMC349AMS8GE can be used in 4G networks and radio systems that require high-performance RF switching.
  • Cellular tech: This high-performance RF switch is suitable for use in cellular technology and wireless gear that requires high isolation and low insertion loss.

Advantages and Disadvantages

Advantages

  • High performance: The HMC349AMS8GE offers high-performance RF switching with high isolation, low insertion loss, and high input linearity.
  • Compact package: This high-performance RF switch is available in a compact SOP-8 package that makes it suitable for use in space-constrained applications.
  • High power handling: The HMC349AMS8GE can handle high powers, making it suitable for demanding RF applications.
  • Wide frequency range: This high-performance RF switch is designed to operate over a wide frequency range of 100 MHz to 2 GHz, making it suitable for use in various RF applications.

Disadvantages

  • Complex design: The HMC349AMS8GE is a complex device that requires careful design and implementation to ensure optimal performance.
  • High cost: This high-performance RF switch may be more expensive than other RF switches on the market, making it less suitable for low-cost applications.

Frequently Asked Questions

Q: What is the frequency range of the HMC349AMS8GE?
A: The HMC349AMS8GE operates over a wide frequency range of 100 MHz to 2 GHz.

Q: What is the isolation performance of the HMC349AMS8GE?
A: The HMC349AMS8GE offers high isolation of up to 57 dB from 100 MHz to 2 GHz.

Q: What is the insertion loss of the HMC349AMS8GE?
A: The HMC349AMS8GE features a low insertion loss of 0.9 dB from 100 MHz to 2 GHz.

Q: Can the HMC349AMS8GE handle high powers?
A: Yes, the HMC349AMS8GE can handle high powers with a through path of up to 33.5 dBm and a terminated path of up to 26.5 dBm.

Q: What is the package type of the HMC349AMS8GE?
A: The HMC349AMS8GE is available in a compact SOP-8 package.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category RF Switch ICs RoHS Details
Switch Configuration SPDT Minimum Frequency 0 Hz
Maximum Frequency 4 GHz Insertion Loss 1.8 dB
Off Isolation - Typ 47 dB Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C Mounting Style SMD/SMT
Package / Case MSOP-8 Technology GaAs
Series HMC349A Brand Analog Devices
Moisture Sensitive Yes Number of Switches Dual
Operating Supply Current 1.2 mA Pd - Power Dissipation 969 mW
Product Type RF Switch ICs Factory Pack Quantity 500
Subcategory Wireless & RF Integrated Circuits Supply Voltage - Max 5 V
Unit Weight 0.004938 oz

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HMC349AMS8GE

RF Switch SPDT 100MHz to 4GHz 42dB 8-Pin MSOP EP T/R

Inventory:

6,801