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HMC221BE

RF Switch SPDT 0.01MHz to 3GHz 14dB 6-Pin SOT-26 T/R

Inventory:9,426

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Overview of HMC221BE

The HMC221BE is a broadband gallium arsenide (GaAs) MMIC low-noise amplifier (LNA) designed for high-gain, low-noise applications in the RF and microwave frequency range. It features a wide frequency range and low power consumption, making it suitable for various receiver and transmitter front-end designs.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • VCC: Positive power supply
  • GND: Power ground
  • RF IN: Radio frequency input
  • VPOS: Bias voltage input
  • RF OUT: Radio frequency output

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the HMC221BE LNA for a visual representation.

Key Features

  • Broadband Performance: The HMC221BE offers high gain and low noise figure across a wide RF and microwave frequency range.
  • Low Power Consumption: This LNA is designed for low power operation, suitable for battery-powered or energy-efficient applications.
  • High Linearity: It provides high linearity to maintain signal integrity in demanding RF systems.
  • Rejection of Spurious Signals: The HMC221BE minimizes the impact of spurious signals in the RF band, enhancing overall system performance.
  • Integrated ESD Protection: Includes built-in electrostatic discharge (ESD) protection for robust operation in various environments.

Note: For detailed technical specifications, please refer to the HMC221BE datasheet.

Application

  • Wireless Communication Systems: Ideal for use in RF transceivers, base stations, and wireless infrastructure equipment.
  • Radar Systems: Suitable for radar receiver front-ends requiring high-performance, low-noise amplification.
  • Satellite Communication: Used in satellite ground stations and satellite communication systems for signal reception and amplification.

Functionality

The HMC221BE is a broadband GaAs MMIC LNA designed to amplify weak signals while maintaining low noise and high linearity, making it essential for various RF and microwave applications.

Usage Guide

  • Power Supply: Connect VCC (Pin 1) to the positive power supply and GND (Pin 2) to the power ground.
  • Biasing: Apply the bias voltage to VPOS (Pin 4) to set the operating point of the LNA.
  • RF Connections: Connect the RF IN (Pin 3) to the RF input source and RF OUT (Pin 5) to the downstream circuitry.

Frequently Asked Questions

Q: Can the HMC221BE withstand harsh environmental conditions?
A: Yes, the HMC221BE features integrated ESD protection, ensuring reliable operation in harsh environments.

Equivalent

For similar functionalities, consider these alternatives to the HMC221BE:

  • HMC242A: Another GaAs MMIC LNA offering similar broadband performance and low-noise characteristics.
  • ADL5545: This RF LNA from Analog Devices provides high gain and low noise figure for RF and microwave applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category RF Switch ICs RoHS Details
Switch Configuration SPDT Minimum Frequency 0 Hz
Maximum Frequency 3 GHz Insertion Loss 0.4 dB
Off Isolation - Typ 29 dB Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C Mounting Style SMD/SMT
Package / Case SOT-23-6 Technology GaAs
Series HMC221B Brand Analog Devices
Number of Switches Single Pd - Power Dissipation 360 mW
Product Type RF Switch ICs Factory Pack Quantity 500
Subcategory Wireless & RF Integrated Circuits Unit Weight 0.000847 oz

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HMC221BE

RF Switch SPDT 0.01MHz to 3GHz 14dB 6-Pin SOT-26 T/R

Inventory:

9,426