H5TC4G83EFR-RDA

The H5TC4G83EFR-RDA is a high-speed CMOS SDRAM device that offers a storage capacity of 4Gb. It is designed to provide high-speed, low-power memory access for a wide range of applications including computing, networking, and consumer electronics.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

• A0-A12: Address Inputs
• BA0-BA1: Bank Address Inputs
• DQ0-DQ31: Data Input/Output
• CK, /CK: Clock Input and Inverted Clock Input
• CS, /CS: Chip Select and Inverted Chip Select
• WE, /WE: Write Enable and Inverted Write Enable
• RAS, /RAS: Row Address Strobe and Inverted Row Address Strobe
• CAS, /CAS: Column Address Strobe and Inverted Column Address Strobe
• LDQS, /LDQS, UDQS, /UDQS: Data Strobe Signals
• DM: Data Mask
• VDD, VDDQ: Power Supplies
• VSS, VSSQ: Ground

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the H5TC4G83EFR-RDA SDRAM for a visual representation.

Key Features

• High-Speed CMOS SDRAM: Offers high-speed memory access suitable for demanding computing and networking applications.
• 4Gb Capacity: Provides a storage capacity of 4 gigabits for ample memory space.
• Low Power Consumption: Designed to operate with low power consumption, ideal for portable and energy-efficient devices.
• Wide Application Range: Suitable for use in computing systems, networking equipment, and various consumer electronics.
• Data Transfer Rate: Supports high data transfer rates for efficient memory operations.

Note: For detailed technical specifications, please refer to the H5TC4G83EFR-RDA datasheet.

Application

• Computer Systems: Ideal for use in computer systems and servers requiring high-speed and high-capacity memory.
• Networking Equipment: Suitable for networking devices such as routers, switches, and network appliances.
• Consumer Electronics: Used in various consumer electronics applications including smartphones, tablets, and digital cameras.

Functionality

The H5TC4G83EFR-RDA provides high-speed, low-power memory access, making it suitable for a wide range of computing, networking, and consumer electronics applications.

Usage Guide

• Power Supply: Connect VDD and VDDQ to the respective power supplies, and VSS and VSSQ to ground.
• Data Connections: Connect the DQ0-DQ31 pins to the data lines of the system.
• Control Signals: Use the various control signals (CK, CS, WE, RAS, CAS, etc.) for memory operations.

Frequently Asked Questions

Q: Is the H5TC4G83EFR-RDA suitable for battery-powered devices?
A: Yes, the low power consumption of the H5TC4G83EFR-RDA makes it suitable for use in battery-powered devices requiring high-speed memory access.