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FZ200R65KF2

N-Channel Module-5

Inventory:7,878

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Overview of FZ200R65KF2

The FZ200R65KF2 is a high-power, high-performance IGBT module designed for use in industrial and power electronic applications. It features a compact and robust design, making it suitable for demanding environments and power control systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • CE: Collector-Emitter connection for IGBT
  • PE: Positive Emitter connection for IGBT
  • NE: Negative Emitter connection for IGBT
  • GC: Gate Control for IGBT
  • GE: Gate Emitter for IGBT
  • C: Collector connection for Free-wheeling diode
  • E: Emitter connection for Free-wheeling diode
  • NC: No Connection or Not Connected
  • NC: No Connection or Not Connected

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the FZ200R65KF2 IGBT module for a visual representation.

Key Features

  • High Power IGBT Module: The FZ200R65KF2 is designed to handle high power levels, making it suitable for industrial power applications.
  • Compact and Robust Design: The module's compact design and robust construction ensure reliability and durability in harsh operating conditions.
  • High Performance: With low conduction and switching losses, the FZ200R65KF2 offers high performance in power control systems.
  • Integrated Free-wheeling Diode: The module includes an integrated free-wheeling diode for efficient commutation and protection against reverse voltage spikes.
  • Low Saturation Voltage: The IGBT features low saturation voltage, reducing power dissipation and improving efficiency.

Note: For detailed technical specifications, please refer to the FZ200R65KF2 datasheet.

Application

  • Industrial Power Systems: Ideal for use in industrial power systems including motor drives, inverters, and welding equipment.
  • Renewable Energy: Suitable for applications in renewable energy systems such as solar inverters and wind turbine converters.
  • Power Distribution: Used in power distribution systems and equipment for efficient power control and management.

Functionality

The FZ200R65KF2 IGBT module provides high-power switching and control capabilities, offering reliable performance in various industrial and power electronic applications.

Usage Guide

  • Power Supply: Connect the positive and negative emitter connections (PE and NE) to the appropriate power supply voltages.
  • Gate Control: Apply the gate control signal (GC) for switching the IGBT on and off as required for the application.
  • Free-wheeling Diode: The collector (C) and emitter (E) connections of the integrated free-wheeling diode must be appropriately connected for inductive load applications.

Frequently Asked Questions

Q: Is the FZ200R65KF2 suitable for high-frequency switching applications?
A: The FZ200R65KF2 is designed for high-power applications with moderate frequency switching capabilities. For high-frequency applications, consider specialized modules designed for such requirements.

Equivalent

For similar functionalities, consider these alternatives to the FZ200R65KF2:

  • FZ1800R17KF6C: This is another high-power IGBT module with comparable performance characteristics suitable for industrial and power electronic applications.
  • FZ2400R12KF6C: A high-power IGBT module designed for demanding power control systems and industrial applications, offering similar features to the FZ200R65KF2.
  • FZ1600R17KE3: This IGBT module provides high performance and power handling capabilities, making it a suitable alternative to the FZ200R65KF2 for industrial power applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Modules Brand Infineon Technologies
Product Type IGBT Modules Factory Pack Quantity 4
Subcategory IGBTs

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    Returns for refund: within 90 days

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