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FZ1800R17KF4

FZ1800R17KF4: An Insulated Gate Bipolar Transistor capable of handling currents up to 1800A and voltages up to 1700V

Inventory:5,640

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Overview of FZ1800R17KF4

The FZ1800R17KF4 is a high-power IGBT module designed for various industrial applications requiring robust and efficient power switching capabilities.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Collector
  • Emitter
  • G
  • E
  • V
  • VS
  • C
  • VC
  • S
  • SD
  • VD
  • DS
  • ES
  • SS
  • EC
  • GC

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the FZ1800R17KF4 IGBT module for a visual representation.

Key Features

  • High-Power IGBT Module: Designed for high-current and high-voltage applications.
  • Robust Construction: Suitable for industrial environments requiring reliable performance.
  • Low Saturation Voltage: Ensures efficient power switching with minimal losses.
  • Integrated Diode: Includes an integrated freewheeling diode for optimized switching characteristics.
  • Temperature Monitoring: Features temperature sensing for thermal management.

Note: For detailed technical specifications, please refer to the FZ1800R17KF4 datasheet.

Application

  • Motor Drives: Ideal for use in motor drive applications requiring high-power switching.
  • Power Supplies: Used in power supply units requiring efficient power conversion.
  • Industrial Automation: Suitable for industrial automation systems requiring reliable power switching.

Functionality

The FZ1800R17KF4 is designed to provide robust power switching capabilities in high-current and high-voltage industrial applications.

Usage Guide

  • Power Connections: Connect the collector, emitter, and other necessary terminals according to the application requirements.
  • Thermal Management: Ensure adequate cooling and monitoring of temperature to maintain optimal performance.
  • Protection: Implement appropriate protection circuits to safeguard against overcurrent and overvoltage conditions.

Frequently Asked Questions

Q: Is the FZ1800R17KF4 suitable for high-frequency switching applications?
A: While primarily designed for high-power applications, it may not be suitable for high-frequency switching due to inherent characteristics. Consider alternatives designed for high-frequency operation.

Equivalent

For similar functionalities, consider these alternatives to the FZ1800R17KF4:

  • FZ1200R12KF5: Another high-power IGBT module with similar current and voltage ratings.
  • IXGH40N60C2D1: A high-current IGBT module suitable for industrial applications requiring robust switching performance.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Modules Product IGBT Silicon Modules
Configuration Single Collector- Emitter Voltage VCEO Max 1.7 kV
Collector-Emitter Saturation Voltage 3.5 V Continuous Collector Current at 25 C 1.8 kA
Gate-Emitter Leakage Current 400 nA Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 125 C Brand Infineon Technologies
Height 38 mm Length 190 mm
Maximum Gate Emitter Voltage 20 V Mounting Style Chassis Mount
Product Type IGBT Modules Factory Pack Quantity 1
Subcategory IGBTs Technology Si
Width 140 mm Part # Aliases FZ1800R17KF4NOSA1

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FZ1800R17KF4

FZ1800R17KF4: An Insulated Gate Bipolar Transistor capable of handling currents up to 1800A and voltages up to 1700V

Inventory:

5,640