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FZ1200R17KF6C_B2

N-Channel Insulated Gate Bipolar Transistor housed in MODULE-7 packaging, capable of handling currents up to 2600A and voltages up to 1700V

Inventory:8,246

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Overview of FZ1200R17KF6C_B2

The FZ1200R17KF6C_B2 is a high-power IGBT (Insulated-Gate Bipolar Transistor) module designed for industrial applications requiring high efficiency and reliability. It features a robust construction and advanced technology to meet the demands of power electronics systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Emitter
  • Collector
  • GATE
  • VCE
  • VGE
  • CE
  • GND

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the FZ1200R17KF6C_B2 IGBT module for a visual representation.

Key Features

  • High Power Capability: Capable of handling high power levels for industrial applications.
  • Efficiency: Offers high efficiency in power conversion processes.
  • Reliability: Designed for reliable operation in harsh industrial environments.
  • Advanced Technology: Utilizes advanced IGBT technology for optimal performance.
  • Protection Features: Includes built-in protection features for overcurrent and overvoltage protection.

Note: For detailed technical specifications, please refer to the FZ1200R17KF6C_B2 datasheet.

Application

  • Motor Drives: Suitable for motor drive applications requiring high power handling capabilities.
  • Industrial Equipment: Ideal for use in various industrial equipment such as power supplies and inverters.
  • Renewable Energy Systems: Used in renewable energy systems for efficient power conversion.

Functionality

The FZ1200R17KF6C_B2 IGBT module is designed to efficiently switch high power loads in industrial systems, providing reliable and stable operation for critical applications.

Usage Guide

  • Power Connections: Connect the Emitter, Collector, and GATE pins according to the system requirements.
  • Control Signals: Apply appropriate voltage levels to the GATE pin to control the switching of the IGBT module.
  • Grounding: Ensure proper grounding of the GND pin for reliable operation.

Frequently Asked Questions

Q: Is the FZ1200R17KF6C_B2 suitable for high-frequency switching applications?
A: [Answer regarding suitability for high-frequency switching applications].

Equivalent

For similar functionalities, consider these alternatives to the FZ1200R17KF6C_B2:

  • FZ1400R17KF6C_B2: Another high-power IGBT module with similar specifications and performance.
  • IXYS IXGR40N60C2D1: A high-performance IGBT module designed for industrial power applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid FZ1200R17KF6C_B2 Pbfree Code No
Rohs Code No Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG Package Description MODULE-7
Reach Compliance Code ECCN Code EAR99
HTS Code 8541.29.00.95 Samacsys Manufacturer Infineon
Product Category IGBT Modules RoHS Details
Product IGBT Silicon Modules Configuration Dual Common Emitter Common Gate
Collector- Emitter Voltage VCEO Max 1.7 kV Collector-Emitter Saturation Voltage 2.6 V
Continuous Collector Current at 25 C 1.95 kA Gate-Emitter Leakage Current 400 nA
Pd - Power Dissipation 9.6 kW Package / Case IHM130
Minimum Operating Temperature - 40 C Maximum Operating Temperature + 125 C
Brand Infineon Technologies Height 38 mm
Length 140 mm Maximum Gate Emitter Voltage 20 V
Mounting Style SMD/SMT Product Type IGBT Modules
Factory Pack Quantity 2 Subcategory IGBTs
Technology Si Width 130 mm
Part # Aliases SP000100588 FZ1200R17KF6CB2NOSA1

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Warranty, Returns, and Additional Information

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    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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FZ1200R17KF6C_B2

N-Channel Insulated Gate Bipolar Transistor housed in MODULE-7 packaging, capable of handling currents up to 2600A and voltages up to 1700V

Inventory:

8,246