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FQT4N20LTF

FQT4N20LTF MOSFET: N-channel, 0.85 A, 200 V, SOT-223 Package

Inventory:5,106

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Overview of FQT4N20LTF

The FQT4N20LTF is an N-channel MOSFET transistor designed for high-speed switching applications. It features a low on-resistance, making it suitable for power management and motor control in various electronic systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Gate: Control terminal for the MOSFET
  • Drain: Current carrying terminal
  • Body Diode: Internal diode connected to the drain

Circuit Diagram

Include a circuit diagram illustrating the connections and usage of the FQT4N20LTF MOSFET for a more visual understanding of its application.

Key Features

  • High-Speed Switching: The FQT4N20LTF is optimized for fast switching operations, making it suitable for high-frequency applications.
  • Low On-Resistance: With a low RDS(ON), this MOSFET minimizes power loss and heat generation, enhancing efficiency in power management systems.
  • High Voltage Capability: Capable of withstanding high drain-source voltages, making it suitable for various power control applications.
  • Enhanced Thermal Performance: The FQT4N20LTF is designed for efficient heat dissipation, ensuring reliable operation under high power conditions.

Note: For detailed technical specifications, please refer to the FQT4N20LTF datasheet.

Application

  • Power Management: Ideal for use in power supply circuits, DC-DC converters, and voltage regulation systems.
  • Motor Control: Suitable for motor drive applications, including speed control and power switching in motor drive circuits.
  • High-Frequency Circuits: Used in high-speed switching circuits and high-frequency signal amplification applications.

Functionality

The FQT4N20LTF is an N-channel MOSFET designed for high-speed switching and power management applications. It provides reliable and efficient control of high-power loads in electronic systems.

Usage Guide

  • Gate Connection: Apply the control signal to the gate terminal to control the switching behavior of the MOSFET.
  • Source and Drain Connections: Connect the source to the ground or common reference, and the drain to the load or power source as per the circuit requirements.

Frequently Asked Questions

Q: Is the FQT4N20LTF suitable for high-temperature environments?
A: Yes, the FQT4N20LTF is designed for enhanced thermal performance, making it suitable for use in high-temperature conditions.

Equivalent

For similar functionalities, consider these alternatives to the FQT4N20LTF:

  • FQP30N06L: An N-channel MOSFET offering comparable features for power management and high-speed switching applications.
  • IRF540N: This is another N-channel MOSFET suitable for high-power applications and motor control, providing similar performance characteristics to the FQT4N20LTF.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type SOT-223-4 / TO-261-4 Case Outline 318H-01
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 4000
ON Target Y Channel Polarity N-Channel
Configuration Single V(BR)DSS Min (V) 200
VGS Max (V) ±30 VGS(th) Max (V) 2
ID Max (A) 0.85 PD Max (W) 2.2
RDS(on) Max @ VGS = 4.5 V (mΩ) 1400 RDS(on) Max @ VGS = 10 V (mΩ) 1350
Qg Typ @ VGS = 10 V (nC) 4 Ciss Typ (pF) 240
Pricing ($/Unit) $0.2453Sample

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FQT4N20LTF

FQT4N20LTF MOSFET: N-channel, 0.85 A, 200 V, SOT-223 Package

Inventory:

5,106