• FQPF2N60C TO-220F-3
FQPF2N60C TO-220F-3


Power MOSFET, N Channel, 600 V, 2 A, 4.7 ohm, TO-220F, Through Hole


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Overview of FQPF2N60C

The FQPF2N60C is a N-channel QFET® enhancement-mode power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.


Key Features

  • Low gate charge (8.5nC)
  • Low Crss (4.3pF)
  • 100% avalanche tested


The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Mfr onsemi
Series QFET® Package Tube
Product Status Obsolete FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.7Ohm @ 1A, 10V Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 235 pF @ 25 V FET Feature -
Power Dissipation (Max) 23W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole Supplier Device Package TO-220F-3
Package / Case TO-220-3 Full Pack

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