• FQPF2N60C TO-220F-3
FQPF2N60C TO-220F-3

FQPF2N60C

Trans MOSFET N-CH 600V 2A 3-Pin(3+Tab) TO-220FP Tube

Quantity Unit Price(USD) Ext. Price
1 $0.350 $0.35
10 $0.285 $2.85
30 $0.258 $7.74
100 $0.222 $22.20
500 $0.207 $103.50
1000 $0.198 $198.00

Inventory:8,182

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Overview of FQPF2N60C

The FQPF2N60C is an N-channel MOSFET transistor with a VDS voltage rating of 600V and a continuous drain current of 2A. It is designed for use in high-power switching applications where efficient power management is crucial.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • G:Gate
  • D:Drain
  • S:Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the FQPF2N60C MOSFET for a visual representation.

Key Features

  • High Voltage Rating:With a VDS rating of 600V,this MOSFET is suitable for high-voltage applications.
  • Low ON Resistance: The FQPF2N60C offers low ON resistance for efficient power conduction and minimal power loss.
  • High Current Capability: This MOSFET can handle continuous drain currents up to 2A, making it ideal for high-power applications.
  • Fast Switching Speed: With fast switching characteristics, the FQPF2N60C ensures quick transitions between ON and OFF states.
  • Enhanced Thermal Performance: The MOSFET is designed for enhanced thermal dissipation, contributing to overall system reliability.

Note: For detailed technical specifications, please refer to the FQPF2N60C datasheet.

Application

  • Switching Circuits: Ideal for use in high-power switching circuits such as motor controls, power supplies, and inverters.
  • Power Management: Suitable for applications requiring efficient power management and voltage regulation.
  • Electronic Ballasts: Used in electronic ballast circuits for fluorescent and HID lamps to control current and voltage levels.

Functionality

The FQPF2N60C N-channel MOSFET enables efficient switching and control of high-power loads in various electronic applications. Its high voltage rating and current handling capabilities make it a versatile component for power management.

Usage Guide

  • Gate Control: Apply the appropriate voltage levels to the gate pin to control the MOSFET switching behavior.
  • Drain Connection: Connect the drain pin to the load or high-voltage source for power conduction.
  • Source Connection: Ground the source pin of the MOSFET for proper operation.

Frequently Asked Questions

Q: What is the maximum voltage rating of the FQPF2N60C?
A: The FQPF2N60C has a maximum VDS rating of 600V, making it suitable for high-voltage applications.

Q: Can the FQPF2N60C be used in motor control applications?
A: Yes, the FQPF2N60C is well-suited for motor control applications due to its high voltage rating and current handling capabilities.

Equivalent

For similar functionalities, consider these alternatives to the FQPF2N60C:

  • IRF3205: An N-channel MOSFET with comparable voltage and current ratings, suitable for high-power switching applications.
  • STP16NF06: This MOSFET offers similar performance characteristics to the FQPF2N60C and is commonly used in power management applications.

FQPF2N60C

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Mfr onsemi
Series QFET® Package Tube
Product Status Obsolete FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.7Ohm @ 1A, 10V Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 235 pF @ 25 V FET Feature -
Power Dissipation (Max) 23W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole Supplier Device Package TO-220F-3
Package / Case TO-220-3 Full Pack Base Product Number FQPF2

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