FQPF13N06L
60V N-Channel QFET Logic Level MOSFET FQPF13N06L
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Part Number : FQPF13N06L
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Package/Case : TO-220F-3
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Brand : FAIRCHILD/ON
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Components Classification : Single FETs, MOSFETs
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Datesheet : FQPF13N06L DataSheet (PDF)
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Series : FQPF13N06L
The FQPF13N06L is an N-Channel MOSFET transistor designed for use in power switching applications. It features a low on-resistance and high current capability, making it suitable for various power management tasks. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the FQPF13N06L MOSFET for better understanding. Note: For detailed technical specifications, please refer to the FQPF13N06L datasheet. Functionality The FQPF13N06L N-Channel MOSFET transistor is designed to control power flow in electronic circuits efficiently. It offers low on-resistance and high current capability for reliable power management. Usage Guide Q: What is the maximum current rating of the FQPF13N06L? Q: Can the FQPF13N06L be used in high-power applications? For similar functionalities, consider these alternatives to the FQPF13N06L:Overview of FQPF13N06L
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The FQPF13N06L can handle currents up to a certain specified limit. Please refer to the datasheet for exact values.
A: Yes, the FQPF13N06L is suitable for high-power applications due to its high current capability and low on-resistance.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Source Content uid | FQPF13N06L | Pbfree Code | Yes |
| Part Life Cycle Code | End Of Life | Ihs Manufacturer | ON SEMICONDUCTOR |
| Package Description | TO-220F, 3 PIN | Manufacturer Package Code | 221AT |
| Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
| Factory Lead Time | 28 Weeks | Samacsys Manufacturer | onsemi |
| Avalanche Energy Rating (Eas) | 90 mJ | Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 60 V |
| Drain Current-Max (Abs) (ID) | 10 A | Drain Current-Max (ID) | 10 A |
| Drain-source On Resistance-Max | 0.14 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PSFM-T3 | JESD-609 Code | e3 |
| Number of Elements | 1 | Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 175 °C |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT | Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 24 W | Pulsed Drain Current-Max (IDM) | 40 A |
| Qualification Status | Not Qualified | Surface Mount | NO |
| Terminal Finish | MATTE TIN | Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
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