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FQP5N80

Field-Effect Transistor N-Channel 800 Volts 4.8 Amps 3-Pin TO-220 Package on Rail

Quantity Unit Price(USD) Ext. Price
1000 $0.347 $347.00
500 $0.355 $177.50
200 $0.367 $73.40
1 $0.947 $0.95

Inventory:7,613

*The price is for reference only.
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Overview of FQP5N80

The FQP5N80 is a N-Channel MOSFET transistor designed for high power applications in electronic circuits. This MOSFET offers low on-resistance and high switching speed, making it suitable for power management and control applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

You can incorporate a circuit diagram that illustrates the connections and operation of the FQP5N80 MOSFET for a more visual representation.

Key Features

  • High Power Handling Capacity: The FQP5N80 can handle high power levels, making it suitable for power electronics applications.
  • Low On-Resistance: This MOSFET offers low on-resistance, reducing power losses and improving efficiency.
  • High Switching Speed: The FQP5N80 has a fast switching speed, enabling rapid switching transitions in electronic circuits.
  • High Voltage Rating: With a high voltage rating, this MOSFET can withstand high voltage levels in applications.
  • Temperature Stability: The FQP5N80 demonstrates good temperature stability, ensuring reliable performance over a wide temperature range.

Note: For detailed technical specifications, please refer to the FQP5N80 datasheet.

Applications

  • Power Management: The FQP5N80 is commonly used in power management circuits, such as voltage regulators and power supplies.
  • Switching Circuits: This MOSFET is suitable for switching circuits in applications like motor control and LED drivers.
  • Audio Amplification: The FQP5N80 can be utilized in audio amplifier circuits for power amplification purposes.

Functionality

The FQP5N80 acts as a high-power N-Channel MOSFET that controls the flow of current between the drain and source terminals based on the gate voltage applied.

Usage Guide

  • Gate Control: Connect the Gate (G) terminal to control the switching of the MOSFET.
  • Drain Connection: Connect the Load or power supply to the Drain (D) terminal of the MOSFET.
  • Source Connection: Connect the ground or common reference point to the Source (S) terminal of the MOSFET.

Equivalent

For similar functionalities, consider these alternatives to the FQP5N80:

  • IRF3205: N-Channel MOSFET with comparable power handling and switching characteristics.
  • STP55NF06L: Another N-Channel MOSFET suitable for high power applications with low on-resistance.
  • 2N7002: A smaller N-Channel MOSFET option for low-power applications and signal switching.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style Through Hole
Package / Case TO-220-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 800 V
Id - Continuous Drain Current 4.8 A Rds On - Drain-Source Resistance 2.6 Ohms
Vgs - Gate-Source Voltage - 30 V, + 30 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 140 W
Channel Mode Enhancement Brand onsemi / Fairchild
Configuration Single Fall Time 40 ns
Forward Transconductance - Min 4.9 S Height 16.3 mm
Length 10.67 mm Product Type MOSFET
Rise Time 60 ns Factory Pack Quantity 50
Subcategory MOSFETs Transistor Type 1 N-Channel
Type MOSFET Typical Turn-Off Delay Time 55 ns
Typical Turn-On Delay Time 22 ns Width 4.7 mm
Part # Aliases FQP5N80_NL Unit Weight 0.068784 oz

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FQP5N80

Field-Effect Transistor N-Channel 800 Volts 4.8 Amps 3-Pin TO-220 Package on Rail

Inventory:

7,613