• FQP4N90 Package
FQP4N90 Package

FQP4N90

In Stock:5,814

FQP4N90 is a high-quality Single FETs, MOSFETs from Fairchild Semiconductor

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Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series QFET® Package Bulk
Product Status Obsolete FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 900 V
Current - Continuous Drain (Id) @ 25°C 4.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.3Ohm @ 2.1A, 10V Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 25 V Power Dissipation (Max) 140W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Supplier Device Package TO-220-3 Package / Case TO-220-3

Overview of FQP4N90

The FQP4N90 is a Power Field-Effect Transistor optimized for high voltage and current operations. It provides excellent performance for switching applications.

Pinout

The FQP4N90 pinout refers to the configuration and function of each pin in its TO-220-3 package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the FQP4N90 has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • 900V Drain-to-Source Voltage: The FQP4N90 can handle high voltage applications with its 900V drain-to-source voltage rating.
  • 4.2A Continuous Drain Current: This transistor is designed to handle high current applications with a continuous drain current of 4.2A.
  • 140W Power Dissipation: The FQP4N90 has a power dissipation of 140W, making it suitable for high-power applications.
  • 3.3Ω@10V Drain-to-Source On-State Resistance: This transistor has a low on-state resistance of 3.3Ω at 10V, making it efficient in switching applications.
  • 2.1A@5V Gate Drive Current: The FQP4N90 can handle high gate drive currents with its 2.1A rating at 5V.

Applications

  • Power Supplies: The FQP4N90 is suitable for use in power supplies that require high voltage and current switching.
  • Motor Control: This transistor can be used in motor control applications where high voltage and current are required.
  • Audio Equipment: The FQP4N90 can be used in audio equipment such as amplifiers and speakers that require high power handling.
  • Industrial Automation: This transistor is suitable for use in industrial automation applications that require high voltage and current switching.

Advantages and Disadvantages

Advantages

  • High Voltage Handling: The FQP4N90 can handle high voltage applications with its 900V drain-to-source voltage rating.
  • High Current Handling: This transistor is designed to handle high current applications with a continuous drain current of 4.2A.

Disadvantages

  • Heat Generation: The FQP4N90 can generate heat during operation, which may require additional cooling measures.

Equivalents

For similar functionalities, consider these alternatives to the FQP4N90:

  • FQP4N60: This transistor has a similar voltage and current rating as the FQP4N90 but with a lower power dissipation.
  • FQP6N80: This transistor has a higher voltage rating than the FQP4N90 but with a lower current handling capability.
  • FQP7N100: This transistor has a higher voltage and current rating than the FQP4N90 but with a higher power dissipation.

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FQP4N90 Package

FQP4N90

Power MOSFET with 3.1ohm resistance in TO-220AB package

Inventory:

5,814