• FQD7N30TF Package
FQD7N30TF Package

FQD7N30TF

In Stock:9,379

FQD7N30TF is a high-quality Single FETs, MOSFETs from onsemi with a operating temperature range of - 55 C ~ + 150 C

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Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer onsemi Product Category MOSFET
RoHS Details Technology Si
Mounting Style SMD/SMT Package / Case TO-252-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 300 V Id - Continuous Drain Current 5.5 A
Rds On - Drain-Source Resistance 700 mOhms Vgs - Gate-Source Voltage - 30 V, + 30 V
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 2.5 W Channel Mode Enhancement
Brand onsemi / Fairchild Configuration Single
Fall Time 35 ns Forward Transconductance - Min 4 S
Height 2.39 mm Length 6.73 mm
Product Type MOSFET Rise Time 75 ns
Factory Pack Quantity 2000 Subcategory MOSFETs
Transistor Type 1 N-Channel Type MOSFET
Typical Turn-Off Delay Time 25 ns Typical Turn-On Delay Time 13 ns
Width 6.22 mm Part # Aliases FQD7N30TF_NL
Unit Weight 0.011640 oz

Overview of FQD7N30TF

The FQD7N30TF is a N-Channel 300 V 5.5A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252AA MOSFET optimized for low on-resistance, fast switching speed, and low gate charge. It provides excellent performance for switching power supplies, DC-DC converters, motor control applications, and inductive heating applications.

Pinout

The FQD7N30TF pinout refers to the configuration and function of each pin in its TO-252AA package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the FQD7N30TF has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • Low on-resistance: The FQD7N30TF offers a low on-resistance, which reduces power loss and heat generation, making it suitable for high-frequency applications.
  • Fast switching speed: This MOSFET features a fast switching speed, allowing it to handle high-frequency signals with minimal distortion.
  • Low gate charge: The FQD7N30TF has a low gate charge, which reduces the energy required to turn the device on and off, making it suitable for battery-powered applications.
  • Optimized for high efficiency: This MOSFET is designed to operate at high efficiencies, reducing power loss and heat generation.
  • High power capability: The FQD7N30TF has a high power capability, making it suitable for demanding applications such as motor control and inductive heating.
  • Enhanced avalanche ruggedness: This MOSFET features enhanced avalanche ruggedness, which protects the device from damage caused by voltage transients.
  • Low thermal resistance: The FQD7N30TF has a low thermal resistance, making it suitable for high-power applications where heat dissipation is critical.
  • RoHS compliant: This MOSFET meets the RoHS (Restriction of Hazardous Substances) directive, ensuring compliance with environmental regulations.
  • Integrated diode: The FQD7N30TF features an integrated diode, which simplifies circuit design and reduces component count.
  • TO-252-3 package: This MOSFET is packaged in a TO-252-3 package, which provides excellent thermal dissipation and mechanical strength.

Applications

  • Switching power supplies: The FQD7N30TF is suitable for switching power supplies that require high-frequency operation and low power loss.
  • DC-DC converters: This MOSFET can be used in DC-DC converters that require fast switching speeds and low power loss.
  • Motor control applications: The FQD7N30TF is suitable for motor control applications that require high-power operation and low thermal resistance.
  • Inductive heating applications: This MOSFET can be used in inductive heating applications that require high-frequency operation and low power loss.

Equivalents

  • FQP7N30TF
  • FQPF7N30TF
  • FQP6N30TF

Frequently Asked Questions

Q: What is the maximum operating voltage of the FQD7N30TF?
A: The maximum operating voltage is 300V.

Q: What is the maximum current rating of the FQD7N30TF?
A: The maximum current rating is 5.5A (Tc).

Q: What is the thermal resistance of the FQD7N30TF?
A: The thermal resistance is 2.5W (Ta), 50W (Tc).

Q: Is the FQD7N30TF RoHS compliant?
A: Yes, the FQD7N30TF meets the RoHS directive.

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FQD7N30TF Package

FQD7N30TF

QFET N-Channel 300V MOSFET

Inventory:

9,379