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FQD2N60CTM

MOSFET TO-252 Power Field-Effect Transistor, characterized by its N-Channel design, capable of handling 1

Inventory:7,870

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Overview of FQD2N60CTM

The FQD2N60CTM is an N-Channel MOSFET transistor designed for high-power switching applications.This MOSFET features a low on-resistance and high switching speed,making it suitable for power supply, motor control, and high-frequency applications.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • G:Gate
  • D:Drain
  • S:Source
  • G:Gate
  • D:Drain
  • S:Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the FQD2N60CTM MOSFET for a visual representation.

Key Features

  • High Power Handling Capacity:The FQD2N60CTM can handle high power levels, making it suitable for demanding applications.
  • Low On-Resistance:With its low on-resistance, this MOSFET minimizes power loss and heat generation during operation.
  • Fast Switching Speed:This MOSFET offers high-speed switching, allowing for efficient power control in dynamic systems.
  • Enhanced Efficiency:By reducing conduction losses, the FQD2N60CTM improves overall system efficiency.
  • Robust Design:The robust construction of the FQD2N60CTM ensures reliable performance in challenging environments.

Note:For detailed technical specifications, please refer to the FQD2N60CTM datasheet.

Application

  • Power Supply Units: Ideal for use in power supply units for regulating and switching high currents.
  • Motor Control Systems: Suitable for motor control applications where high-power switching is required.
  • High-Frequency Circuits: Used in high-frequency applications such as RF amplifiers and oscillators.

Functionality

The FQD2N60CTM is an N-Channel MOSFET transistor that enables high-power switching with low on-resistance and fast switching speed.It provides efficient power control and is well-suited for various high-power applications.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the gate pin to control the conduction of the MOSFET.
  • Load Connection: Connect the load between the drain and source pins to utilize the switching capabilities of the MOSFET.
  • Heat Dissipation: Ensure proper thermal management to dissipate heat generated during operation for optimal performance.

Frequently Asked Questions

Q:Can the FQD2N60CTM be used for high-frequency applications?
A:Yes, the fast switching speed of the FQD2N60CTM makes it suitable for high-frequency circuits and applications requiring rapid power control.

Equivalent

For similar functionalities, consider these alternatives to the FQD2N60CTM:

  • IRF3205: A robust N-Channel power MOSFET with comparable power handling and switching characteristics.
  • STP55NF06L: This N-Channel MOSFET offers similar performance to the FQD2N60CTM and is designed for high-power applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type DPAK-3 / TO-252-3 Case Outline 369AS
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 2500
ON Target N Channel Polarity N-Channel
Configuration Single V(BR)DSS Min (V) 600
VGS Max (V) ±30 VGS(th) Max (V) 4
ID Max (A) 1.9 PD Max (W) 44
RDS(on) Max @ VGS = 10 V (mΩ) 4700 Qg Typ @ VGS = 10 V (nC) 8.5
Ciss Typ (pF) 180 Pricing ($/Unit) $0.3024Sample

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packageimg

FQD2N60CTM

MOSFET TO-252 Power Field-Effect Transistor, characterized by its N-Channel design, capable of handling 1

Inventory:

7,870