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FQD1N60CTM

Unipolar N-MOSFET transistor housed in DPAK package, featuring a voltage tolerance of 600V and a current capacity of 0

Quantity Unit Price(USD) Ext. Price
1 $0.611 $0.61
10 $0.509 $5.09
30 $0.457 $13.71
100 $0.407 $40.70
500 $0.376 $188.00
1000 $0.361 $361.00

Inventory:4,776

*The price is for reference only.
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Overview of FQD1N60CTM

The FQD1N60CTM is an N-Channel MOSFET transistor designed for high-power switching applications. Featuring a low on-state resistance and high current capability, this MOSFET is ideal for use in power supplies, motor control, and other power electronics applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Gate (G): Control terminal for the MOSFET
  • Drain (D): Current carrying terminal
  • Source (S): Connection to the ground or return path

Circuit Diagram

Include a circuit diagram showing the typical connections for the FQD1N60CTM MOSFET in a switching circuit.

Key Features

  • High Power Switching: The FQD1N60CTM is capable of handling high currents and voltages for efficient power switching.
  • Low On-Resistance: With a low on-state resistance, this MOSFET minimizes power loss and heat generation during operation.
  • Fast Switching Speed: Offers fast turn-on and turn-off times, making it suitable for high-frequency switching applications.
  • High Current Capability: Designed to handle significant currents, allowing for reliable operation in power circuits.
  • Robust Design: Built to withstand high temperatures and harsh operating conditions for enhanced durability.

Note: For detailed technical specifications, please refer to the FQD1N60CTM datasheet.

Application

  • Power Supplies: Suitable for use in power supply circuits for efficient voltage regulation.
  • Motor Control: Ideal for motor drive applications requiring high current switching.
  • Power Inverters: Used in power inverter designs for converting DC power to AC power efficiently.

Functionality

The FQD1N60CTM N-Channel MOSFET transistor enables high-power switching operations with low on-state resistance, providing efficient control over current flow in various power electronics applications.

Usage Guide

  • Gate Drive: Apply the appropriate voltage to the Gate (G) pin to control the switching behavior of the MOSFET.
  • Load Connection: Connect the Drain (D) pin to the load and the Source (S) pin to the ground or return path.

Frequently Asked Questions

Q: What is the maximum voltage rating of the FQD1N60CTM?
A: The FQD1N60CTM has a maximum voltage rating of 600V, making it suitable for high-voltage applications.

Q: Can the FQD1N60CTM be used in PWM motor control applications?
A: Yes, the FQD1N60CTM is well-suited for Pulse Width Modulation (PWM) motor control applications, providing efficient switching for motor drive circuits.

Equivalent

For similar functionalities, consider these alternatives to the FQD1N60CTM:

  • IRF840: A popular N-Channel MOSFET with similar power handling capabilities and performance characteristics.
  • STP16NF06: This N-Channel MOSFET from STMicroelectronics offers high current capability and low on-resistance for power switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Last Shipments Compliance PbAHP
Package Type DPAK-3 / TO-252-3 Case Outline 369AS
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 2500
ON Target N Channel Polarity N-Channel
Configuration Single V(BR)DSS Min (V) 600
VGS Max (V) ±30 VGS(th) Max (V) 4
ID Max (A) 1 PD Max (W) 28
RDS(on) Max @ VGS = 10 V (mΩ) 11500 Qg Typ @ VGS = 10 V (nC) 4.8
Ciss Typ (pF) 130 Pricing ($/Unit) Price N/A

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FQD1N60CTM

Unipolar N-MOSFET transistor housed in DPAK package, featuring a voltage tolerance of 600V and a current capacity of 0

Inventory:

4,776