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FQB55N10TM

Three-pin component with two additional tabs, designed in D2PAK package

Quantity Unit Price(USD) Ext. Price
800 $1.130 $904.00
500 $1.159 $579.50
100 $1.223 $122.30
30 $1.368 $41.04
10 $1.509 $15.09
1 $1.735 $1.74

Inventory:7,196

*The price is for reference only.
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Overview of FQB55N10TM

The FQB55N10TM is a N-Channel MOSFET transistor designed for power switching applications. It features a high drain current capability and low on-resistance, making it ideal for use in power management circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • B: Body

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the FQB55N10TM MOSFET for a visual representation.

Key Features

  • High Drain Current Capability: The FQB55N10TM can handle high currents, suitable for power switching applications.
  • Low On-Resistance: With low on-resistance, this MOSFET provides efficient power management.
  • Fast Switching Speed: Offers fast switching speeds for responsive power control.
  • Low Gate Threshold Voltage: Operates at a low gate threshold voltage for improved control.
  • High Temperature Performance: Maintains performance at high temperatures for reliable operation.

Note: For detailed technical specifications, please refer to the FQB55N10TM datasheet.

Application

  • Power Management Systems: Ideal for use in power management systems requiring high current handling.
  • Switching Circuits: Suitable for switching circuits in various electronic devices and appliances.
  • Motor Control: Used in motor control applications for efficient power handling.

Functionality

The FQB55N10TM N-Channel MOSFET transistor is designed to efficiently switch high currents in power management applications, offering low on-resistance and fast switching speeds for effective power control.

Usage Guide

  • Gate Connection: Connect the gate (G) pin to the controlling signal source.
  • Drain Connection: Link the drain (D) pin to the power supply or load.
  • Source Connection: Connect the source (S) pin to the ground or common reference point.

Frequently Asked Questions

Q: What is the maximum current rating of the FQB55N10TM?
A: The FQB55N10TM can handle a maximum continuous drain current as specified in the datasheet.

Q: Is the FQB55N10TM suitable for high-frequency applications?
A: The FQB55N10TM is designed for power switching applications and may not be optimal for high-frequency operations. For such requirements, consider specialized components.

Equivalent

For similar functionalities, consider these alternatives to the FQB55N10TM:

  • FQP55N10: An alternative N-Channel MOSFET with comparable specifications for power switching applications.
  • IRF3205: This MOSFET provides similar power handling capabilities and is widely used in power electronics.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type D2PAK-3 / TO-263-2 Case Outline 418AJ
MSL Type 1 MSL Temp (°C) 245
Container Type REEL Container Qty. 800
ON Target Y Channel Polarity N-Channel
Configuration Single V(BR)DSS Min (V) 100
VGS Max (V) ±25 VGS(th) Max (V) 4
ID Max (A) 55 PD Max (W) 155
RDS(on) Max @ VGS = 10 V (mΩ) 26 Qg Typ @ VGS = 10 V (nC) 75
Ciss Typ (pF) 2100 Pricing ($/Unit) $1.0426Sample

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FQB55N10TM

Three-pin component with two additional tabs, designed in D2PAK package

Inventory:

7,196