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FP10R12KE3

Advanced Electronic IGBT Component

Inventory:4,053

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Overview of FP10R12KE3

The FP10R12KE3 is an IGBT (Insulated Gate Bipolar Transistor) module designed for high-power switching applications. It combines the functionalities of an IGBT and a diode in a single module, offering robust performance in various industrial and power electronics applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Emitter
  • Collector
  • Gate
  • Free-wheeling Diode Anode
  • Free-wheeling Diode Cathode

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the FP10R12KE3 IGBT module for a visual representation.

Key Features

  • High-Power Switching: The FP10R12KE3 is capable of handling high currents and voltages, making it suitable for high-power switching applications.
  • Integrated Diode: Includes an integrated free-wheeling diode for improved efficiency and performance.
  • Robust Design: Designed for reliability and durability in demanding industrial environments.
  • Low Saturation Voltage: Provides low saturation voltage for reduced power losses during operation.
  • Temperature Stability: Maintains stable performance over a wide temperature range.

Note: For detailed technical specifications, please refer to the FP10R12KE3 datasheet.

Application

  • Industrial Motor Drives: Ideal for controlling large motors in industrial applications.
  • Power Supplies: Used in power supply units for efficient switching and regulation.
  • Renewable Energy: Suitable for inverters in solar and wind energy systems.

Functionality

The FP10R12KE3 combines the functions of an IGBT and a diode, providing efficient switching and current handling capabilities in various power electronics applications.

Usage Guide

  • Power Connections: Connect the emitter, collector, and gate terminals according to the circuit requirements.
  • Diode Connections: Ensure proper connection of the free-wheeling diode anode and cathode for optimal performance.
  • Heat Management: Use appropriate heat sinking and cooling methods to maintain operational temperatures within safe limits.

Frequently Asked Questions

Q: What is the maximum current rating of the FP10R12KE3?
A: The FP10R12KE3 can handle a maximum current rating as specified in the datasheet.

Q: Is the FP10R12KE3 suitable for high-frequency switching applications?
A: While primarily designed for high-power switching, its suitability for high-frequency applications depends on specific operating conditions.

Equivalent

For similar functionalities, consider these alternatives to the FP10R12KE3:

  • FF150R12KE3: Another IGBT module with comparable performance characteristics and application suitability.
  • FP25R12KE3: Offers similar features with higher current and voltage ratings for more demanding applications.
  • FP50R12KE3: A higher power IGBT module suitable for applications requiring increased power handling capacity.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Modules RoHS Details
REACH Details Product IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max 1.2 kV Collector-Emitter Saturation Voltage 2.45 V
Continuous Collector Current at 25 C 15 A Gate-Emitter Leakage Current 400 nA
Pd - Power Dissipation 20 mW Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 125 C Brand Infineon Technologies
Maximum Gate Emitter Voltage 20 V Mounting Style Chassis Mount
Product Type IGBT Modules Factory Pack Quantity 20
Subcategory IGBTs Technology Si
Part # Aliases SP000100274 FP10R12KE3BOMA1

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FP10R12KE3

Advanced Electronic IGBT Component

Inventory:

4,053