• FGH40N60UFD TO-247-3
FGH40N60UFD TO-247-3

FGH40N60UFD

High-power transistor for industrial applicatio

Inventory:4,423

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Overview of FGH40N60UFD

The FGH40N60UFD is a high-speed IGBT (Insulated Gate Bipolar Transistor) optimized for high current capability, low saturation voltage, and fast switching. It provides excellent performance for power system protection, energy storage solutions, and distributed energy resources.

Pinout

The FGH40N60UFD pinout refers to the configuration and function of each pin in its TO-247-3LD package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the FGH40N60UFD has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • High Current Capability: The FGH40N60UFD can handle high currents up to 40A, making it suitable for demanding applications.
  • Low Saturation Voltage: With a low saturation voltage of VCE(sat) =1.8V @ IC = 40A, the FGH40N60UFD minimizes power loss and heat generation.
  • Fast Switching: The FGH40N60UFD features fast switching with an EOFF =12uJ/A, allowing for efficient energy transfer and reduced electromagnetic interference (EMI).
  • High Input Impedance: The high input impedance of the FGH40N60UFD ensures minimal current consumption and reduced power loss.
  • RoHS Compliant: The FGH40N60UFD is compliant with the Restriction of Hazardous Substances (RoHS) directive, making it a safe choice for environmentally conscious designs.

Applications

  • Power System Protection: The FGH40N60UFD can be used to protect power systems from overcurrents and short circuits.
  • Energy Storage Solutions: Its high current capability makes it suitable for energy storage applications such as battery charging and discharging.
  • Distributed Energy Resources: The FGH40N60UFD can be used in distributed energy resources, including solar panels and wind turbines.
  • Industrial Automation: Its fast switching and high input impedance make it suitable for industrial automation applications such as motor control and power conversion.
  • Renewable Energy: The FGH40N60UFD can be used in renewable energy systems, including solar panels and wind turbines.

Advantages and Disadvantages

Advantages

  • High Current Capability: The FGH40N60UFD can handle high currents up to 40A, making it suitable for demanding applications.
  • Low Saturation Voltage: With a low saturation voltage of VCE(sat) =1.8V @ IC = 40A, the FGH40N60UFD minimizes power loss and heat generation.
  • Fast Switching: The FGH40N60UFD features fast switching with an EOFF =12uJ/A, allowing for efficient energy transfer and reduced electromagnetic interference (EMI).

Disadvantages

  • High Power Consumption: The FGH40N60UFD requires a significant amount of power to operate, which can be a concern in battery-powered or energy-harvesting applications.
  • Sensitivity to Temperature: The FGH40N60UFD is sensitive to temperature changes, which can affect its performance and lifespan.

Equivalents

The FGH40N60UFD is equivalent to other high-speed IGBTs such as the STP40NF60L or the IRG4PC50K.

Frequently Asked Questions

Q: What is the maximum current rating of the FGH40N60UFD?
A: The maximum current rating of the FGH40N60UFD is 40A.

Q: What is the saturation voltage of the FGH40N60UFD?
A: The saturation voltage of the FGH40N60UFD is VCE(sat) =1.8V @ IC = 40A.

Q: What is the EOFF value of the FGH40N60UFD?
A: The EOFF value of the FGH40N60UFD is 12uJ/A.

Q: Is the FGH40N60UFD RoHS compliant?
A: Yes, the FGH40N60UFD is RoHS compliant.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Transistors Maximum Gate Emitter Voltage - 20 V, 20 V
Brand onsemi Product Type IGBT Transistors
Factory Pack Quantity 450 Subcategory IGBTs

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FGH40N60UFD

High-power transistor for industrial applicatio

Inventory:

4,423