• FGH40N60UFD TO-247-3
FGH40N60UFD TO-247-3


Insulated Gate Bipolar Transistor


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Overview of FGH40N60UFD

General DescriptionUsing Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential.Features• High current capability• Low saturation voltage: VCE(sat) =1.8V @ IC= 40A• High input impedance• Fast switching• RoHS compliantApplications• Induction Heating, UPS, SMPS, PFC

Key Features

  • High current capability
  • Low saturation voltage: VCE(sat) =1.8V @ IC= 40A
  • High input impedance
  • Fast switching
  • RoHS compliant




The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid FGH40N60UFD Rohs Code Yes
Part Life Cycle Code Active Ihs Manufacturer ON SEMICONDUCTOR
Package Description FLANGE MOUNT, R-PSFM-T3 Reach Compliance Code compliant
ECCN Code EAR99 Samacsys Manufacturer onsemi
Additional Feature LOW CONDUCTION LOSS Case Connection COLLECTOR
Collector Current-Max (IC) 80 A Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE Gate-Emitter Thr Voltage-Max 6.5 V
Gate-Emitter Voltage-Max 20 V JEDEC-95 Code TO-247AB
JESD-30 Code R-PSFM-T3 Number of Elements 1
Number of Terminals 3 Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 290 W Surface Mount NO
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Application POWER CONTROL
Transistor Element Material SILICON Turn-off Time-Nom (toff) 160 ns
Turn-on Time-Nom (ton) 69 ns

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