• FDV302P SOT-23
FDV302P SOT-23

FDV302P

Trans MOSFET P-CH 25V 0.12A 3-Pin SOT-23 T/R

Quantity Unit Price(USD) Ext. Price
10 $0.034 $0.34
100 $0.028 $2.80
300 $0.024 $7.20
3000 $0.022 $66.00
6000 $0.020 $120.00
9000 $0.019 $171.00

Inventory:6,174

*The price is for reference only.
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Overview of FDV302P

The FDV302P is a P-channel PowerTrench MOSFET featuring low on-state resistance and fast switching performance. It is designed for power management applications where efficient power handling is crucial.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • S: Source
  • D: Drain

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the FDV302P MOSFET for a visual representation.

Key Features

  • Low On-State Resistance: Enables efficient power handling and reduced heat dissipation.
  • Fast Switching Speed: Ideal for applications requiring quick response times.
  • P-Channel PowerTrench Technology: Offers high performance in power management applications.
  • Enhanced Power Efficiency: Helps optimize power distribution and management systems.
  • High Voltage Rating: Suitable for circuits requiring high voltage handling capabilities.

Note: For detailed technical specifications, please refer to the FDV302P datasheet.

Application

  • Power Management Systems: Perfect for use in power management systems to regulate and control power flow.
  • Switching Circuits: Ideal for switching circuits that require efficient and fast power switching.
  • Voltage Regulation: Suitable for voltage regulation applications where low on-state resistance is essential.

Functionality

The FDV302P is a P-channel PowerTrench MOSFET designed for power management applications. It offers low on-state resistance and fast switching speeds, making it a reliable component for efficient power handling.

Usage Guide

  • Gate Control: Apply appropriate gate voltage to control the switching behavior of the FDV302P.
  • Source-Drain Connection: Ensure correct polarity and connections between the source and drain pins for proper operation.
  • Heat Dissipation: Implement adequate heat sinking measures to manage any heat generated during operation.

Frequently Asked Questions

Q: Is the FDV302P suitable for high-frequency applications?
A: Yes, the FDV302P offers fast switching speeds, making it suitable for high-frequency applications.

Equivalent

For similar functionalities, consider these alternatives to the FDV302P:

  • FDS8880: A comparable P-channel MOSFET with similar performance characteristics.
  • FDN302P: Another P-channel PowerTrench MOSFET for power management applications.

FDV302P

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 25 V
Id - Continuous Drain Current 120 mA Rds On - Drain-Source Resistance 13 Ohms
Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 1.5 V
Qg - Gate Charge 310 pC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 350 mW
Channel Mode Enhancement Series FDV302P
Brand onsemi / Fairchild Configuration Single
Fall Time 8 ns Forward Transconductance - Min 0.135 S
Height 1.2 mm Length 2.9 mm
Product MOSFET Small Signal Product Type MOSFET
Rise Time 8 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 P-Channel
Type MOSFET Typical Turn-Off Delay Time 9 ns
Typical Turn-On Delay Time 5 ns Width 1.3 mm
Part # Aliases FDV302P_NL Unit Weight 0.000282 oz

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