• FDS8880 8-SOIC
FDS8880 8-SOIC

FDS8880

N-Channel PowerTrench® MOSFET 30V, 11.6A, 10mΩ, 2500-REEL

Inventory:6,046

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Overview of FDS8880

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on)and fast switching speed.Features rDS(on)= 10mΩ, VGS = 10V, ID= 11.6A rDS(on)= 12mΩ, VGS = 4.5V, ID= 10.7A High performance trench technology for extremely low rDS(on) Low gate charge High power and current handling capability RoHS Compliant

FDS8880

Key Features

  • rDS(on)= 10mΩ, VGS = 10V, ID= 11.6A
  • rDS(on)= 12mΩ, VGS = 4.5V, ID= 10.7A
  • High performance trench technology for extremely low rDS(on)
  • Low gate charge
  • High power and current handling capability
  • RoHS Compliant

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid FDS8880 Pbfree Code Yes
Part Life Cycle Code Active Ihs Manufacturer ON SEMICONDUCTOR
Package Description SMALL OUTLINE, R-PDSO-G8 Manufacturer Package Code 751EB
Reach Compliance Code compliant ECCN Code EAR99
Factory Lead Time 43 Weeks Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 82 mJ Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V Drain Current-Max (Abs) (ID) 10.7 A
Drain Current-Max (ID) 11.6 A Drain-source On Resistance-Max 0.01 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JESD-30 Code R-PDSO-G8
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 8
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 2.5 W
Qualification Status Not Qualified Surface Mount YES
Terminal Finish MATTE TIN Terminal Form GULL WING
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING

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