• FDS8880 SOIC-8
FDS8880 SOIC-8

FDS8880

Trans MOSFET N-CH 30V 11.6A 8-Pin SOIC T/R

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Overview of FDS8880

The FDS8880 is a dual N-channel PowerTrench MOSFET designed for use in high-efficiency power management applications. This MOSFET features low on-resistance and fast switching performance, making it suitable for synchronous rectification, load switching, and DC-DC converter circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • GATE: Gate terminal for both MOSFET channels
  • DRAIN1: Drain terminal for MOSFET channel 1
  • SOURCE1: Source terminal for MOSFET channel 1
  • DRAIN2: Drain terminal for MOSFET channel 2
  • SOURCE2: Source terminal for MOSFET channel 2
  • NC: No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the FDS8880 MOSFET for a visual representation.

Key Features

  • Dual N-Channel MOSFET: Provides two independent N-channel MOSFETs for versatile power management applications.
  • Low On-Resistance: The FDS8880 offers low on-resistance for minimal power dissipation and high efficiency.
  • Fast Switching Performance: With its PowerTrench technology, this MOSFET ensures fast switching times, reducing switching losses.
  • High Current Handling Capability: Capable of handling high currents, making it suitable for power delivery applications.
  • Compact Package: Available in space-saving packages for easy integration into various circuit designs.

Note: For detailed technical specifications, please refer to the FDS8880 datasheet.

Application

  • Power Management: Ideal for use in synchronous rectification, load switching, and DC-DC converter circuits for efficient power management.
  • Motor Control: Suitable for motor control applications requiring high current handling capability and fast switching performance.
  • Voltage Regulation: Can be used in voltage regulation circuits for maintaining stable power supply voltages.

Functionality

The FDS8880 is a dual N-channel PowerTrench MOSFET that provides efficient power management capabilities. It offers low on-resistance and fast switching performance, making it suitable for a wide range of applications.

Usage Guide

  • Gate Drive: Apply appropriate gate drive voltage to the GATE pin to control the switching of the MOSFET channels.
  • Load Connection: Connect the load between the DRAIN and SOURCE terminals of the respective MOSFET channels.
  • Heat Dissipation: Ensure proper heat sinking or thermal management to dissipate heat generated during operation.

Frequently Asked Questions

Q: What is the maximum current rating of the FDS8880?
A: The FDS8880 can handle a maximum continuous drain current as specified in the datasheet.

Q: Is the FDS8880 suitable for high-frequency switching applications?
A: Yes, the FDS8880 offers fast switching performance, making it suitable for high-frequency switching applications in power electronics.

Equivalent

For similar functionalities, consider these alternatives to the FDS8880:

  • IRF9540: A complementary P-channel Power MOSFET offering similar performance characteristics to the FDS8880.
  • NTD5867NL: This is a dual N-channel MOSFET with comparable specifications to the FDS8880, suitable for power management applications.
  • AON6220: Another dual N-channel MOSFET with low on-resistance and fast switching characteristics, providing alternatives to the FDS8880.

FDS8880

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOIC-8 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 11.6 A Rds On - Drain-Source Resistance 10 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1.2 V
Qg - Gate Charge 30 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 2.5 W
Channel Mode Enhancement Tradename PowerTrench
Series FDS8880 Brand onsemi / Fairchild
Configuration Single Fall Time 15 ns
Height 1.75 mm Length 4.9 mm
Product Type MOSFET Rise Time 27 ns
Factory Pack Quantity 2500 Subcategory MOSFETs
Transistor Type 1 N-Channel Type MOSFET
Typical Turn-Off Delay Time 38 ns Typical Turn-On Delay Time 7 ns
Width 3.9 mm Part # Aliases FDS8880_NL
Unit Weight 0.004586 oz

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