• packageimg
packageimg

FDS6673BZ

Trans MOSFET P-CH 30V 14.5A 8-Pin SOIC T/R

Quantity Unit Price(USD) Ext. Price
1000 $0.634 $634.00
500 $0.669 $334.50
100 $0.727 $72.70
30 $0.858 $25.74
10 $0.963 $9.63
1 $1.208 $1.21

Inventory:8,575

*The price is for reference only.
  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for FDS6673BZ using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of FDS6673BZ

The FDS6673BZ is a dual N-channel PowerTrench MOSFET designed for high-efficiency power management applications. It features a low ON-resistance and high current-carrying capability, making it suitable for use in power supplies, DC-DC converters, and motor control circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain (Main Terminal)
  • S: Source
  • G: Gate
  • D: Drain (Main Terminal)
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the FDS6673BZ for a visual representation.

Key Features

  • Dual N-Channel MOSFET: Provides two N-channel MOSFETs in a single package for efficient power management.
  • Low ON-Resistance: The FDS6673BZ offers low ON-resistance for reduced power losses and improved efficiency.
  • High Current Capability: Capable of carrying high currents, making it suitable for demanding applications.
  • Fast Switching Speed: Features fast switching characteristics for enhanced performance in switching applications.
  • Wide Operating Voltage Range: Operates within a wide voltage range, providing flexibility in various circuit designs.

Note: For detailed technical specifications, please refer to the FDS6673BZ datasheet.

Application

  • Power Supplies: Ideal for use in power supply circuits for efficient voltage regulation and power management.
  • DC-DC Converters: Suitable for DC-DC converter applications requiring high efficiency and fast switching speeds.
  • Motor Control: Used in motor control circuits for driving and controlling the speed of motors.

Functionality

The FDS6673BZ is a dual N-channel MOSFET that offers efficient power management and high current-handling capabilities. It ensures reliable performance in various power circuit applications.

Usage Guide

  • Gate Connection: Connect the Gate (G) pin to the control signal for switching the MOSFET.
  • Drain and Source Connections: Connect the Drain (D) and Source (S) pins appropriately in the circuit according to the application requirements.

Frequently Asked Questions

Q: Is the FDS6673BZ suitable for high-frequency applications?
A: Yes, the fast switching speed of the FDS6673BZ makes it suitable for high-frequency switching applications.

Equivalent

For similar functionalities, consider these alternatives to the FDS6673BZ:

  • FDS8880: Another dual N-channel PowerTrench MOSFET with similar characteristics to the FDS6673BZ, providing an alternative for power management applications.
  • FDS4559: This dual N-channel MOSFET offers comparable performance to the FDS6673BZ and can be used as a substitute in various circuits.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOIC-8 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 14.5 A Rds On - Drain-Source Resistance 6.5 mOhms
Vgs - Gate-Source Voltage - 25 V, + 25 V Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 124 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 2.5 W
Channel Mode Enhancement Tradename PowerTrench
Series FDS6673BZ Brand onsemi / Fairchild
Configuration Single Fall Time 105 ns
Forward Transconductance - Min 60 S Height 1.75 mm
Length 4.9 mm Product Type MOSFET
Rise Time 16 ns Factory Pack Quantity 2500
Subcategory MOSFETs Transistor Type 1 P-Channel
Type MOSFET Typical Turn-Off Delay Time 225 ns
Typical Turn-On Delay Time 14 ns Width 3.9 mm
Unit Weight 0.004586 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy ?

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package ?

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment ?

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

packageimg

FDS6673BZ

Trans MOSFET P-CH 30V 14.5A 8-Pin SOIC T/R

Inventory:

8,575