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FDS4935BZ

Trans MOSFET P-CH 30V 6.9A 8-Pin SOIC T/R

Inventory:9,584

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Overview of FDS4935BZ

The FDS4935BZ is a dual -30V P-Channel PowerTrench MOSFET optimized for high-performance and low-voltage operations. It provides excellent performance for various applications, including analog and digital signal switching.

Pinout

The FDS4935BZ pinout refers to the configuration and function of each pin in its SOIC-8 package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the FDS4935BZ has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • -6.9 A, -30 V: The FDS4935BZ offers a high current handling capability of up to 6.9A at a voltage rating of -30V.
  • RDS(ON) = 22 mΩ @ VGS = –10 V: The device features an extremely low RDS(ON) of 22mΩ at a gate-source voltage of -10V.
  • RDS(ON) = 35 m @ VGS = –4.5 V: The FDS4935BZ also offers an RDS(ON) of 35m at a gate-source voltage of -4.5V.
  • Extended VGSS range (–25V) for battery applications: This feature allows the device to be used in battery-powered applications, providing an extended operating range.
  • ESD protection diode (note 3): The FDS4935BZ includes an ESD protection diode, which helps protect the device from electrostatic discharge.
  • High performance trench technology for extremely low RDS(ON): The device utilizes high-performance trench technology to achieve its extremely low RDS(ON).
  • High power and current handling capability: The FDS4935BZ is designed to handle high powers and currents, making it suitable for demanding applications.

Applications

  • Works well in any situation.: The FDS4935BZ can be used in a wide range of applications where high-performance and low-voltage operations are required.
  • Suitable for multiple uses.: This device is versatile and can be applied to various tasks, making it an excellent choice for many projects.
  • Great for various tasks.: The FDS4935BZ is perfect for everyday use and can handle a variety of tasks with ease.
  • Perfect for everyday use.: This device is designed to be used in daily applications, providing reliable performance and efficiency.
  • Versatile and practical.: The FDS4935BZ is an excellent choice for projects that require a high-performance MOSFET with low-voltage operations.
  • Handy for all kinds of projects.: This device can be used in various projects, from simple to complex, providing reliable performance and efficiency.

Advantages and Disadvantages

The FDS4935BZ offers several advantages, including its high-performance capabilities, low-voltage operations, and extended VGSS range. However, it may have some disadvantages, such as its limited operating temperature range and the need for proper thermal management.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOIC-8 Transistor Polarity P-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 6.9 A Rds On - Drain-Source Resistance 18 mOhms
Vgs - Gate-Source Voltage - 25 V, + 25 V Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 29 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 1.6 W
Channel Mode Enhancement Tradename PowerTrench
Series FDS4935BZ Brand onsemi / Fairchild
Configuration Dual Fall Time 13 ns
Forward Transconductance - Min 22 S Height 1.75 mm
Length 4.9 mm Product MOSFET Small Signals
Product Type MOSFET Rise Time 13 ns
Factory Pack Quantity 2500 Subcategory MOSFETs
Transistor Type 2 P-Channel Type MOSFET
Typical Turn-Off Delay Time 68 ns Typical Turn-On Delay Time 12 ns
Width 3.9 mm Unit Weight 0.006596 oz

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FDS4935BZ

Trans MOSFET P-CH 30V 6.9A 8-Pin SOIC T/R

Inventory:

9,584