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Power MOSFET, N-Channel, UniFETTM, 400V, 15A, 300mΩ, TO-220, 1000-TUBE


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Overview of FDP15N40

DescriptionThese N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.Features• RDS(on) = 0.24Ω ( Typ.)@ VGS = 10V, ID = 7.5A• Low Gate Charge ( Typ. 28nC)• Low Crss ( Typ. 17pF)• Fast Switching• 100% Avalanche Tested• Improved dv/dt Capability• RoHS Compliant

Key Features

  • RDS(on) = 0.24Ω ( Typ.)@ VGS = 10V, ID = 7.5A
  • Low Gate Charge ( Typ. 28nC)
  • Low Crss ( Typ. 17pF)
  • Fast Switching
  • 100% Avalanche Tested
  • Improved dv/dt Capability
  • RoHS Compliant




The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid FDP15N40 Pbfree Code Yes
Part Life Cycle Code End Of Life Ihs Manufacturer ON SEMICONDUCTOR
Package Description FLANGE MOUNT, R-PSFM-T3 Manufacturer Package Code 340AT
Reach Compliance Code compliant ECCN Code EAR99
Factory Lead Time 4 Weeks Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 731 mJ Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 400 V Drain Current-Max (Abs) (ID) 15 A
Drain Current-Max (ID) 15 A Drain-source On Resistance-Max 0.3 Ω
JESD-30 Code R-PSFM-T3 JESD-609 Code e3
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style FLANGE MOUNT Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 170 W Pulsed Drain Current-Max (IDM) 60 A
Qualification Status Not Qualified Surface Mount NO
Terminal Finish MATTE TIN Terminal Form THROUGH-HOLE
Terminal Position SINGLE Transistor Application SWITCHING
Transistor Element Material SILICON Manufacturer onsemi
Product Category MOSFET RoHS Details
Technology Si Mounting Style Through Hole
Package / Case TO-220-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 400 V
Id - Continuous Drain Current 15 A Rds On - Drain-Source Resistance 300 mOhms
Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 36 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 170 W
Channel Mode Enhancement Tradename UniFET
Series FDP15N40 Brand onsemi / Fairchild
Fall Time 40 ns Height 16.3 mm
Length 10.67 mm Product Type MOSFET
Rise Time 55 ns Factory Pack Quantity 1000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 72 ns Typical Turn-On Delay Time 26 ns
Width 4.7 mm

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