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FDP15N40

Trans MOSFET N-CH 400V 15A 3-Pin(3+Tab) TO-220 Tube

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Overview of FDP15N40

The FDP15N40 is an N-channel MOSFET transistor designed for high power applications. It features a maximum drain-source voltage of 400V and a continuous drain current of 15A, making it suitable for various power switching applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • GATE: Gate terminal for controlling the MOSFET
  • DRAIN: Drain terminal, connected to the high-power source
  • SOURCE: Source terminal, connected to the low-power side

Circuit Diagram

Include a circuit diagram showing the connection of the FDP15N40 in a typical power switching circuit for a better understanding of its operation.

Key Features

  • N-Channel MOSFET: The FDP15N40 is an N-channel enhancement mode MOSFET suitable for high-power applications.
  • High Voltage and Current Ratings: With a 400V maximum voltage and 15A continuous current, it can handle significant power levels.
  • Low On-Resistance: The MOSFET has low on-resistance for efficient power switching and minimal power dissipation.
  • Fast Switching Speed: It offers fast turn-on and turn-off times, ideal for high-frequency switching applications.
  • TO-220 Package: Housed in a TO-220 package, the FDP15N40 provides easy mounting and heat dissipation.

Note: For detailed technical specifications, please refer to the FDP15N40 datasheet.

Application

  • Power Supplies: Suitable for use in high-power DC-DC converters and power supply units.
  • Motor Control: Can be employed in motor drive circuits for controlling high-power motors.
  • Inverters: Ideal for use in inverter systems for converting DC power to AC power efficiently.

Functionality

The FDP15N40 N-channel MOSFET is designed to handle high power levels with efficiency and reliability. It serves as a critical component in power electronics applications requiring high voltage and current capabilities.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the GATE terminal to control the switching of the MOSFET.
  • Heat Dissipation: Ensure proper heat sinking for the TO-220 package to maintain optimal operating temperatures.
  • Load Connection: Connect the high-power load to the DRAIN terminal and the low-power side to the SOURCE terminal.

Frequently Asked Questions

Q: What is the maximum drain-source voltage rating of the FDP15N40?
A: The FDP15N40 has a maximum drain-source voltage of 400V.

Q: Is the FDP15N40 suitable for high-frequency switching applications?
A: Yes, the FDP15N40 offers fast switching speeds, making it suitable for high-frequency switching applications.

Equivalent

For similar high-power MOSFET options, consider these alternatives to the FDP15N40:

  • IRF3205: A popular N-channel MOSFET with similar voltage and current ratings for power applications.
  • STP55NF06L: Another N-channel MOSFET offering comparable performance and features to the FDP15N40.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid FDP15N40 Pbfree Code Yes
Part Life Cycle Code End Of Life Ihs Manufacturer ON SEMICONDUCTOR
Package Description FLANGE MOUNT, R-PSFM-T3 Manufacturer Package Code 340AT
Reach Compliance Code compliant ECCN Code EAR99
Factory Lead Time 4 Weeks Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 731 mJ Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 400 V Drain Current-Max (Abs) (ID) 15 A
Drain Current-Max (ID) 15 A Drain-source On Resistance-Max 0.3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 JESD-609 Code e3
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style FLANGE MOUNT Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 170 W Pulsed Drain Current-Max (IDM) 60 A
Qualification Status Not Qualified Surface Mount NO
Terminal Finish MATTE TIN Terminal Form THROUGH-HOLE
Terminal Position SINGLE Transistor Application SWITCHING
Transistor Element Material SILICON Manufacturer onsemi
Product Category MOSFET RoHS Details
Technology Si Mounting Style Through Hole
Package / Case TO-220-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 400 V
Id - Continuous Drain Current 15 A Rds On - Drain-Source Resistance 300 mOhms
Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 36 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 170 W
Channel Mode Enhancement Tradename UniFET
Series FDP15N40 Brand onsemi / Fairchild
Fall Time 40 ns Height 16.3 mm
Length 10.67 mm Product Type MOSFET
Rise Time 55 ns Factory Pack Quantity 1000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 72 ns Typical Turn-On Delay Time 26 ns
Width 4.7 mm Unit Weight 0.068784 oz

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