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  • Part Number : FDMC8884

  • Package/Case : 8-MLP (3.3x3.3)

  • Brands : Fairchild Semiconductor

  • Components Categories : FETs, MOSFETsSingle FETs, MOSFETs

  • Datesheet : FDMC8884 DataSheet (PDF)

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Technical Attributes

General DescriptionThis N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for applications where ultra low rDS(on) is required in small spaces such as High performance VRM, POL and Oring functions.Features■ Max rDS(on) = 1.3 mΩ at VGS = 10 V, ID = 30 A■ Max rDS(on) = 1.8 mΩ at VGS = 4.5 V, ID = 25 A■ High performance technology for extremely low rDS(on)■ Termination is Lead-free and RoHS CompliantApplications■ DC - DC Buck Converters■ Point of Load■ High Efficiency Load Switch and Low Side Switching■ Oring FET

Key Features

  • Max rDS(on) = 1.3 mΩ at VGS = 10 V, ID = 30 A
  • Max rDS(on) = 1.8 mΩ at VGS = 4.5 V, ID = 25 A
  • High performance technology for extremely low rDS(on)
  • Termination is Lead-free and RoHS Compliant




The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Mfr onsemi
Series PowerTrench® Package Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Product Status Obsolete FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 15A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 19mOhm @ 9A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 685 pF @ 15 V FET Feature -
Power Dissipation (Max) 2.3W (Ta), 18W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package 8-MLP (3.3x3.3)
Package / Case 8-PowerWDFN

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Warranty, Returns, and Additional Information

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