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FDD8444

With its compact size and superior electrical characteristics

Quantity Unit Price(USD) Ext. Price
1 $1.199 $1.20
10 $1.035 $10.35
30 $0.945 $28.35
100 $0.842 $84.20
500 $0.797 $398.50
1000 $0.776 $776.00

Inventory:8,367

*The price is for reference only.
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Overview of FDD8444

The FDD8444 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that features a high switching speed and low ON-resistance, making it suitable for power management applications. This MOSFET is designed to handle high currents and voltages efficiently, offering reliable performance in various electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Gate (G): Control terminal for switching the MOSFET
  • Drain (D): Power terminal where the current enters the MOSFET
  • Source (S): Ground terminal of the MOSFET

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the FDD8444 MOSFET for a visual representation.

Key Features

  • High Switching Speed: The FDD8444 offers rapid switching capabilities, making it ideal for applications requiring fast response times.
  • Low ON-Resistance: With a low ON-resistance, this MOSFET minimizes power loss and heat generation during operation.
  • High Current and Voltage Handling: Capable of handling high currents and voltages, the FDD8444 is suitable for power management tasks.
  • Efficient Power Management: This MOSFET contributes to efficient power distribution and regulation in electronic circuits.
  • Compact Design: The FDD8444 is available in a compact package, saving space in circuit designs.

Note: For detailed technical specifications, please refer to the FDD8444 datasheet.

Application

  • Power Supply Systems: Suitable for use in power supply systems to regulate and control power flow.
  • Motor Control: Ideal for motor control applications where high currents and voltages are involved.
  • Inverters and Converters: Used in inverters and converters for efficient power conversion processes.

Functionality

The FDD8444 MOSFET is a high-performance semiconductor device that enables efficient switching and control of power in electronic circuits. It ensures reliable power management and contributes to the overall performance of the system.

Usage Guide

  • Gate Connection: Connect the control signal to the Gate (G) terminal to switch the MOSFET ON and OFF.
  • Power Connections: Connect the load to the Drain (D) terminal and the ground to the Source (S) terminal of the MOSFET.

Frequently Asked Questions

Q: What is the maximum current rating of the FDD8444?
A: The FDD8444 is capable of handling a maximum continuous current of X amps.

Q: Is the FDD8444 suitable for high-frequency applications?
A: Yes, the FDD8444 features a high switching speed, making it suitable for high-frequency operations.

Equivalent

For similar functionalities, consider these alternatives to the FDD8444:

  • IRF840: A power MOSFET with comparable performance characteristics to the FDD8444.
  • BSC046N06NS: This MOSFET offers similar high-current capabilities and low ON-resistance for power management applications.
  • STP75NF75: Another MOSFET option with efficient power handling capabilities suitable for various electronic systems.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case DPAK-3 (TO-252-3)
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 40 V Id - Continuous Drain Current 145 A
Rds On - Drain-Source Resistance 5.2 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2 V Qg - Gate Charge 116 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 153 W Channel Mode Enhancement
Tradename PowerTrench Series FDD8444
Brand onsemi / Fairchild Configuration Single
Fall Time 15 ns Height 2.39 mm
Length 6.73 mm Product Type MOSFET
Rise Time 78 ns Factory Pack Quantity 2500
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 48 ns Typical Turn-On Delay Time 12 ns
Width 6.22 mm Unit Weight 0.011640 oz

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