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FDD8444

With its compact size and superior electrical characteristics

Quantity Unit Price(USD) Ext. Price
1000 $0.776 $776.00
500 $0.797 $398.50
100 $0.842 $84.20
30 $0.945 $28.35
10 $1.035 $10.35
1 $1.199 $1.20

Inventory:8,367

*The price is for reference only.
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Submit your quote request for FDD8444 using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of FDD8444

The FDD8444 is a Trans MOSFET N-CH optimized for low Miller charge, low Qrr body diode, and UIS capability (single pulse/repetitive pulse). It provides excellent performance for general usage applications.

Pinout

The FDD8444 pinout refers to the configuration and function of each pin in its DPAK-3 package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the FDD8444 has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • RDS(ON) = 4mΩ (Typ), VGS = 10V, ID=50A: The FDD8444 offers a low on-state resistance for efficient power management.
  • Qg(10) = 89nC (Typ), VGS=10V: This feature enables the device to handle high current and voltage requirements.
  • Low Miller Charge: The FDD8444 features a low Miller charge, which reduces the risk of unwanted oscillations and improves overall system stability.
  • Low Qrr Body Diode: This feature minimizes the body diode's reverse recovery time, reducing switching losses and improving overall efficiency.
  • UIS Capability (Single Pulse/Repetitive Pulse): The FDD8444 is designed to withstand high-energy pulses, making it suitable for applications that require robust surge protection.
  • Qualified to AEC Q101: This feature ensures the device meets the stringent requirements of the automotive industry.
  • RoHS Compliant: The FDD8444 is compliant with the RoHS directive, making it suitable for use in a wide range of applications.

Applications

  • This product is general usage and suitable for many different applications.

Advantages and Disadvantages

Advantages

  • High current handling capability: The FDD8444 can handle high currents, making it suitable for demanding applications.
  • Low on-state resistance: This feature enables efficient power management and reduces energy losses.
  • Robust surge protection: The device's UIS capability makes it suitable for applications that require robust surge protection.
  • AEC Q101 qualified: The FDD8444 meets the stringent requirements of the automotive industry, making it suitable for use in automotive applications.
  • RoHS compliant: This feature ensures the device is suitable for use in a wide range of applications.

Disadvantages

  • May require additional components for specific applications: The FDD8444 may require additional components, such as resistors or capacitors, to function optimally in certain applications.

Equivalents

For similar functionalities, consider these alternatives to the FDD8444:

  • [Equivalent 1]: [Description]
  • [Equivalent 2]: [Description]
  • [Equivalent 3]: [Description]

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case DPAK-3 (TO-252-3)
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 40 V Id - Continuous Drain Current 145 A
Rds On - Drain-Source Resistance 5.2 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2 V Qg - Gate Charge 116 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 153 W Channel Mode Enhancement
Tradename PowerTrench Series FDD8444
Brand onsemi / Fairchild Configuration Single
Fall Time 15 ns Height 2.39 mm
Length 6.73 mm Product Type MOSFET
Rise Time 78 ns Factory Pack Quantity 2500
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 48 ns Typical Turn-On Delay Time 12 ns
Width 6.22 mm Unit Weight 0.011640 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy ?

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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FDD8444

With its compact size and superior electrical characteristics

Inventory:

8,367