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FDD6612A

High-performance power electronic component for efficient energy conversi

Quantity Unit Price(USD) Ext. Price
1 $0.397 $0.40
10 $0.388 $3.88
30 $0.382 $11.46
100 $0.376 $37.60

Inventory:6,142

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Overview of FDD6612A

The FDD6612A is an N-Channel PowerTrench MOSFET designed for use in various power management and switching applications. This MOSFET features low on-state resistance and fast switching performance, making it suitable for high-efficiency power conversion and motor control.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Gate (G): Input for controlling the switching operation
  • Drain (D): Power output connection
  • Source (S): Common connection for the power supply and load

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the FDD6612A MOSFET for a visual representation.

Key Features

  • Low On-State Resistance: The FDD6612A features low RDS(on), minimizing power dissipation and improving efficiency.
  • Fast Switching Speed: This MOSFET offers fast switching characteristics, enabling high-frequency operation in power electronics.
  • High Power Handling: With its robust design, the FDD6612A is capable of handling significant power levels in various applications.
  • Enhanced Thermal Performance: The package design and thermal properties contribute to efficient heat dissipation, ensuring reliable operation.
  • ESD Protection: Incorporates Electrostatic Discharge (ESD) protection for improved robustness in real-world environments.

Note: For detailed technical specifications, please refer to the FDD6612A datasheet.

Application

  • Power Management: Ideal for use in power supply units, voltage regulators, and DC-DC converters.
  • Motor Control: Suitable for motor driver circuits and brushed DC motor control applications.
  • Switching Circuits: Used in various high-frequency switching applications for efficient power delivery.

Functionality

The FDD6612A is an N-Channel PowerTrench MOSFET designed for efficient power management and high-speed switching operations. It provides reliable and low-loss performance in diverse power electronics applications.

Usage Guide

  • Connections: Connect the gate (G) to the driving circuit, the drain (D) to the load, and the source (S) to the common ground or power supply.
  • Drive Control: Apply appropriate gate voltage to control the turn-on and turn-off operation of the MOSFET.
  • Thermal Considerations: Ensure proper heat sinking and thermal management for optimal performance and reliability.

Frequently Asked Questions

Q: Is the FDD6612A suitable for high-frequency switching applications?
A: Yes, the fast switching speed of the FDD6612A makes it well-suited for high-frequency switching circuits and power converters.

Equivalent

For similar functionalities, consider these alternatives to the FDD6612A:

  • FDD5614: This is an N-Channel MOSFET with comparable power handling and switching characteristics.
  • IRF3205: An alternative N-Channel MOSFET known for its high current handling and robust performance in power applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid FDD6612A Pbfree Code Yes
Part Life Cycle Code End Of Life Ihs Manufacturer ON SEMICONDUCTOR
Package Description SMALL OUTLINE, R-PSSO-G2 Manufacturer Package Code 369AS
Reach Compliance Code not_compliant ECCN Code EAR99
Factory Lead Time 4 Weeks Samacsys Manufacturer onsemi
Additional Feature LOGIC LEVEL COMPATIBLE Avalanche Energy Rating (Eas) 90 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V Drain Current-Max (Abs) (ID) 30 A
Drain Current-Max (ID) 9.5 A Drain-source On Resistance-Max 0.02 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 2 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 36 W Pulsed Drain Current-Max (IDM) 60 A
Qualification Status Not Qualified Surface Mount YES
Terminal Finish MATTE TIN Terminal Form GULL WING
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING Transistor Element Material SILICON

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