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FDD6612A

High-performance power electronic component for efficient energy conversi

Quantity Unit Price(USD) Ext. Price
100 $0.376 $37.60
30 $0.382 $11.46
10 $0.388 $3.88
1 $0.397 $0.40

Inventory:6,142

*The price is for reference only.
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Submit your quote request for FDD6612A using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of FDD6612A

The Fairchild Semiconductor FDD6612A is a N-Channel PowerTrench MOSFET optimized for high-speed and low-voltage operations. It provides excellent performance for analog and digital signal switching.

Pinout

The FDD6612A pinout refers to the configuration and function of each pin in its TO-252 3L package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the FDD6612A has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • Low inductance for high frequency performance: The FDD6612A features a low inductance design that enables high-frequency operation, making it suitable for applications such as power supplies and motor control.
  • High surge immunity for reliable operation: This MOSFET has been designed to withstand high surge currents, ensuring reliable operation even in harsh environments.
  • Fully RoHS compliant materials used: The FDD6612A is manufactured using fully RoHS compliant materials, making it an environmentally friendly choice for your designs.
  • Rds(on) = 12mΩ @ Vgs = 4.5V: This MOSFET features a low on-resistance of 12 milliohms at a gate-source voltage of 4.5 volts, making it suitable for high-frequency applications.
  • Rds(on) = 18mΩ @ Vgs = 10V: The FDD6612A also features an on-resistance of 18 milliohms at a gate-source voltage of 10 volts, providing excellent performance in a wide range of applications.
  • High power density up to 100A: This MOSFET is capable of handling high currents up to 100 amperes, making it suitable for demanding applications such as motor control and power supplies.
  • Low leakage current (1uA @ 25°C): The FDD6612A features a low leakage current of 1 microampere at an operating temperature of 25 degrees Celsius, ensuring reliable operation in a wide range of environments.

Applications

  • Analog and digital signal switching: The FDD6612A is suitable for applications such as analog and digital signal switching, power supplies, motor control, and load switching.
  • Power supplies and motor control: This MOSFET is ideal for use in power supplies and motor control applications where high-frequency operation and low on-resistance are required.
  • Load switching and DC-DC converters: The FDD6612A can also be used in load switching and DC-DC converter applications, providing reliable and efficient performance.

Equivalents

For similar functionalities, consider these alternatives to the FDD6612A:

  • Fairchild Semiconductor FDD6601A: This MOSFET is also designed for high-frequency operation and features a low on-resistance of 15 milliohms at a gate-source voltage of 4.5 volts.
  • International Rectifier IRF540N: This power MOSFET is suitable for applications such as motor control, power supplies, and load switching, and features a low on-resistance of 12 milliohms at a gate-source voltage of 4.5 volts.
  • STMicroelectronics STW45NF50: This power MOSFET is designed for high-frequency operation and features a low on-resistance of 10 milliohms at a gate-source voltage of 4.5 volts, making it suitable for applications such as motor control and power supplies.

Frequently Asked Questions

Q: What is the maximum current rating of the FDD6612A?
A: The maximum current rating of the FDD6612A is 100 amperes.

Q: What is the recommended operating temperature range for the FDD6612A?
A: The recommended operating temperature range for the FDD6612A is -40°C to 150°C.

Q: Is the FDD6612A suitable for high-voltage applications?
A: No, the FDD6612A is not designed for high-voltage applications and should only be used in applications where the voltage rating is within its specifications.

Q: What are the RoHS compliance materials used in the FDD6612A?
A: The FDD6612A is manufactured using fully RoHS compliant materials, including lead-free solder and halogen-free components.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid FDD6612A Pbfree Code Yes
Part Life Cycle Code End Of Life Ihs Manufacturer ON SEMICONDUCTOR
Package Description SMALL OUTLINE, R-PSSO-G2 Manufacturer Package Code 369AS
Reach Compliance Code not_compliant ECCN Code EAR99
Factory Lead Time 4 Weeks Samacsys Manufacturer onsemi
Additional Feature LOGIC LEVEL COMPATIBLE Avalanche Energy Rating (Eas) 90 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V Drain Current-Max (Abs) (ID) 30 A
Drain Current-Max (ID) 9.5 A Drain-source On Resistance-Max 0.02 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 2 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 36 W Pulsed Drain Current-Max (IDM) 60 A
Qualification Status Not Qualified Surface Mount YES
Terminal Finish MATTE TIN Terminal Form GULL WING
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING Transistor Element Material SILICON

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packageimg

FDD6612A

High-performance power electronic component for efficient energy conversi

Inventory:

6,142