FDD3706
MOSFET 20V N-Ch PowerTrench
Inventory:5,056
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Part Number : FDD3706
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Package/Case : TO-252-3
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Brand : FAIRCHILD/ON
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Components Classification : Single FETs, MOSFETs
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Datesheet : FDD3706 DataSheet (PDF)
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Series : FDD3706
The FDD3706 is a N-Channel PowerTrench MOSFET designed for various power management applications.This MOSFET features low on-resistance and high-speed switching capabilities,making it ideal for use in power supply, motor control, and load switching circuits. (Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the FDD3706 MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the FDD3706 datasheet. Functionality The FDD3706 N-Channel PowerTrench MOSFET provides effective power management solutions with low on-resistance and high-speed switching capabilities. It offers reliable performance in power control and switching applications. Usage Guide Q: Is the FDD3706 suitable for high-frequency applications? For similar functionalities, consider these alternatives to the FDD3706:Overview of FDD3706
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the FDD3706 offers high-speed switching capabilities, making it suitable for high-frequency applications requiring efficient power management.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Pbfree Code | Yes | Rohs Code | Yes |
Part Life Cycle Code | Active | Ihs Manufacturer | ROCHESTER ELECTRONICS LLC |
Part Package Code | TO-252 | Package Description | DPAK-3 |
Pin Count | 3 | Reach Compliance Code | |
Avalanche Energy Rating (Eas) | 60 mJ | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 20 V |
Drain Current-Max (ID) | 14.7 A | Drain-source On Resistance-Max | 0.009 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-252 |
JESD-30 Code | R-PSSO-G2 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 2 | Operating Mode | ENHANCEMENT MODE |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE | Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | N-CHANNEL | Pulsed Drain Current-Max (IDM) | 60 A |
Qualification Status | COMMERCIAL | Surface Mount | YES |
Terminal Finish | MATTE TIN | Terminal Form | GULL WING |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Warranty & Returns
Warranty, Returns, and Additional Information
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