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FDD3706

MOSFET 20V N-Ch PowerTrench

Inventory:5,056

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Overview of FDD3706

The FDD3706 is a N-Channel PowerTrench MOSFET designed for various power management applications.This MOSFET features low on-resistance and high-speed switching capabilities,making it ideal for use in power supply, motor control, and load switching circuits.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • Gate:Input terminal for controlling the switching of the MOSFET.
  • Drain:Output terminal for the power flow in the circuit.

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the FDD3706 MOSFET for a visual representation.

Key Features

  • Low On-Resistance: The FDD3706 features low on-resistance, resulting in minimal power loss and efficient performance.
  • High-Speed Switching: This MOSFET offers high-speed switching capabilities, suitable for applications requiring fast response times.
  • Enhanced Power Management: With its PowerTrench technology, the FDD3706 provides effective power management solutions.
  • Temperature Stability: The MOSFET maintains stable performance over a wide temperature range, ensuring reliability in various operating conditions.
  • Voltage Protection: Includes built-in voltage protection features to safeguard connected devices and circuits.

Note: For detailed technical specifications, please refer to the FDD3706 datasheet.

Application

  • Power Supply Systems: Ideal for use in power supply systems to regulate and control the flow of power.
  • Motor Control: Suitable for motor control applications in robotics, automotive systems, and industrial machinery.
  • Load Switching: Used for efficient switching of loads in various electronic circuits.

Functionality

The FDD3706 N-Channel PowerTrench MOSFET provides effective power management solutions with low on-resistance and high-speed switching capabilities. It offers reliable performance in power control and switching applications.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the Gate pin to control the conduction of the MOSFET.
  • Connection: Connect the Drain terminal to the load or power source, and the Source terminal to the ground or return path.
  • Heat Dissipation: Ensure proper thermal management to dissipate heat generated during operation for optimal performance.

Frequently Asked Questions

Q: Is the FDD3706 suitable for high-frequency applications?
A: Yes, the FDD3706 offers high-speed switching capabilities, making it suitable for high-frequency applications requiring efficient power management.

Equivalent

For similar functionalities, consider these alternatives to the FDD3706:

  • IRF3706: This is a comparable N-Channel MOSFET with similar performance characteristics to the FDD3706.
  • STP80NF70: A power MOSFET from STMicroelectronics offering equivalent power management features.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code Yes Rohs Code Yes
Part Life Cycle Code Active Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Part Package Code TO-252 Package Description DPAK-3
Pin Count 3 Reach Compliance Code
Avalanche Energy Rating (Eas) 60 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 14.7 A Drain-source On Resistance-Max 0.009 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 2 Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL Pulsed Drain Current-Max (IDM) 60 A
Qualification Status COMMERCIAL Surface Mount YES
Terminal Finish MATTE TIN Terminal Form GULL WING
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING Transistor Element Material SILICON

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