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FDD3706

MOSFET 20V N-Ch PowerTrench

Inventory:5,056

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Overview of FDD3706

The FDD3706 is a Power Field-Effect Transistor optimized for high-speed and low-voltage operations. It provides excellent performance for many different applications.

Pinout

The FDD3706 pinout refers to the configuration and function of each pin in its DPAK-3 package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the FDD3706 has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • 50 A, 20 V: The FDD3706 can handle a maximum current of 50 amps at a voltage of up to 20 volts.
  • RDS(ON) = 9 mΩ @ VGS = 10 V: This feature allows for low on-resistance when the gate-source voltage is 10 volts.
  • RDS(ON) = 11 mΩ @ VGS = 4.5 V: The FDD3706 also has a low on-resistance of 11 milliohms at a gate-source voltage of 4.5 volts.
  • RDS(ON) = 16 mΩ @ VGS = 2.5 V: Additionally, the device has an on-resistance of 16 milliohms when the gate-source voltage is 2.5 volts.
  • Low gate charge (16nC typical): The FDD3706 has a low gate charge, making it suitable for applications where power consumption needs to be minimized.
  • Fast switching speed: This feature enables the device to switch quickly between on and off states, reducing energy losses and improving overall system efficiency.
  • High performance trench technology for extremely low RDS(ON): The FDD3706 utilizes advanced trench technology to achieve extremely low on-resistance, making it suitable for high-power applications.

Applications

  • This product is general usage and suitable for many different applications.

Equivalents

For similar functionalities, consider these alternatives to the FDD3706:

  • [Equivalent 1]: [Description]
  • [Equivalent 2]: [Description]
  • [Equivalent 3]: [Description]

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code Yes Rohs Code Yes
Part Life Cycle Code Active Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Part Package Code TO-252 Package Description DPAK-3
Pin Count 3 Reach Compliance Code
Avalanche Energy Rating (Eas) 60 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 14.7 A Drain-source On Resistance-Max 0.009 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 2 Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL Pulsed Drain Current-Max (IDM) 60 A
Qualification Status COMMERCIAL Surface Mount YES
Terminal Finish MATTE TIN Terminal Form GULL WING
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING Transistor Element Material SILICON

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FDD3706

MOSFET 20V N-Ch PowerTrench

Inventory:

5,056