• packageimg
packageimg

FCA76N60N

TO-3PN-3 MOSFETs that meet ROHS requirements

Quantity Unit Price(USD) Ext. Price
1 $9.582 $9.58
200 $3.708 $741.60
450 $3.578 $1,610.10
900 $3.514 $3,162.60

Inventory:7,575

*The price is for reference only.
  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for FCA76N60N using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of FCA76N60N

The FCA76N60N is a power MOSFET transistor designed for high-performance switching applications in power supply, motor control, and lighting systems. This N-channel MOSFET features a low ON-resistance and high current capability, making it suitable for high-power applications where efficiency and reliability are crucial.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • NC: No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the FCA76N60N MOSFET for a visual representation.

Key Features

  • Low ON-Resistance: The FCA76N60N offers a low ON-resistance to minimize power losses and improve efficiency in switching applications.
  • High Current Capability: With its high current rating, this MOSFET can handle large currents in power circuits.
  • Fast Switching Speed: The FCA76N60N provides fast switching characteristics, essential for high-frequency applications.
  • High Breakdown Voltage: This MOSFET has a high breakdown voltage, ensuring reliable operation in high-voltage circuits.
  • Temperature Stability: Designed for temperature stability, the FCA76N60N maintains consistent performance across varying operating conditions.

Note: For detailed technical specifications, please refer to the FCA76N60N datasheet.

Application

  • Power Supplies: Ideal for use in power supply circuits to regulate and control the flow of power.
  • Motor Control: Suitable for motor control applications in robotics, industrial automation, and electric vehicles.
  • Lighting Systems: Used in lighting systems to achieve efficient switching and brightness control.

Functionality

The FCA76N60N is a high-performance power MOSFET transistor that enables efficient switching and control of high currents in various electronic applications.

Usage Guide

  • Gate Connection: Connect the gate pin (G) to the driving circuit to control the MOSFET switching operation.
  • Drain and Source Connections: The drain pin (D) is connected to the load, and the source pin (S) is connected to the ground or return path.

Frequently Asked Questions

Q: Is the FCA76N60N suitable for high-frequency applications?
A: Yes, the FCA76N60N features fast switching speed, making it suitable for high-frequency switching applications.

Equivalent

For similar functionalities, consider these alternatives to the FCA76N60N:

  • FCA60N60: A power MOSFET with comparable performance characteristics to the FCA76N60N but in a different package or voltage rating.
  • IRF840: This is an N-channel power MOSFET suitable for high-power switching applications, offering similar features to the FCA76N60N.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET REACH Details
Technology Si Mounting Style Through Hole
Package / Case TO-3PN-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 600 V
Id - Continuous Drain Current 76 A Rds On - Drain-Source Resistance 28 mOhms
Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 285 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 543 W
Channel Mode Enhancement Tradename SupreMOS
Series FCA76N60N Brand onsemi / Fairchild
Configuration Single Forward Transconductance - Min 88 S
Height 20.1 mm Length 16.2 mm
Product Type MOSFET Factory Pack Quantity 450
Subcategory MOSFETs Width 5 mm
Unit Weight 0.162260 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

IRFB20N50KPBF

IRFB20N50KPBF

Recommended alternative MOSFET IRFB20N50K
SBC847BPDW1T1G

SBC847BPDW1T1G

SBC847BPDW1T1G product details: Bipolar Transistors - BJT ROHS, 45V 380mW 200@2mA, 5V 100mA NPN+PNP SOT-363-6
2SA1943-O

2SA1943-O

PNP bipolar junction transistor capable of withstanding 230V and 15A
L6221AS

L6221AS

BUF or INV logic-based driver for peripherals
MJ10006

MJ10006

TO-204AA NPN Darlington Bipolar Junction Transistor
IRFS3207ZPBF

IRFS3207ZPBF

MOSFET with N-channel Design rated for 75V Voltage and 170A Current in D2PAK Package