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F2932NBGP8

RF Switch ICs F2932 RF Switch

Quantity Unit Price(USD) Ext. Price
100 $2.963 $296.30
30 $3.018 $90.54
10 $3.073 $30.73
1 $3.157 $3.16

Inventory:5,822

*The price is for reference only.
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Overview of F2932NBGP8

The F2932NBGP8 is a high-performance power MOSFET designed for use in various electronic applications. It features a low on-state resistance and high current capability, making it suitable for power management and switching circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Gate (G): Control input for switching the MOSFET
  • Drain (D): Output connection for the load
  • Source (S): Common connection for the input and output circuits
  • Body Diode (B): Integrated body diode for reverse current flow
  • Voltage Sense (VS): Pin for sensing the voltage across the MOSFET
  • Feedback (FB): Pin for providing feedback signals in certain applications
  • Thermal Pad (TP): Thermal connection for heat dissipation
  • NC: No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the F2932NBGP8 MOSFET for a visual representation.

Key Features

  • Low On-State Resistance: The F2932NBGP8 offers a low RDS(ON) for efficient power transfer and minimal voltage drop.
  • High Current Capability: This MOSFET can handle high currents, making it suitable for power switching applications.
  • Enhanced Thermal Performance: The thermal pad design enables efficient heat dissipation for improved reliability.
  • Fast Switching Speed: With its low gate charge, the F2932NBGP8 provides rapid switching characteristics.
  • Integrated Body Diode: The built-in body diode allows for seamless current flow and protection against reverse voltage.

Note: For detailed technical specifications, please refer to the F2932NBGP8 datasheet.

Application

  • Power Management: Ideal for use in power supplies, DC-DC converters, and motor control applications.
  • Switching Circuits: Suitable for high-current switching applications in industrial and automotive systems.
  • Voltage Regulation: Can be used in voltage regulation and load switching circuits for efficient power delivery.

Functionality

The F2932NBGP8 power MOSFET delivers high-performance power switching capabilities, enabling efficient control of power flow in electronic circuits.

Usage Guide

  • Gate Control: Apply appropriate gate voltages to control the ON/OFF states of the MOSFET for power management.
  • Heat Dissipation: Ensure proper thermal management to maximize the reliability and performance of the MOSFET.
  • Feedback and Voltage Sensing: Utilize the FB and VS pins for specific applications requiring feedback and voltage monitoring.

Frequently Asked Questions

Q: What is the maximum current rating of the F2932NBGP8?
A: The F2932NBGP8 can handle a maximum continuous current of 100A, making it suitable for high-power applications.

Q: Is the F2932NBGP8 suitable for automotive power systems?
A: Yes, the F2932NBGP8 is designed for high-current and power management applications, making it suitable for use in automotive power systems.

Equivalent

For similar functionalities, consider these alternatives to the F2932NBGP8:

  • IRF3205: A power MOSFET with similar performance characteristics, commonly used in power electronics applications.
  • SiHG30N60E: This MOSFET offers high current capacity and low RDS(ON), suitable for power switching in various systems.
  • AUIRF1405: An automotive-grade power MOSFET designed for robust power management and control in automotive applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pkg. Type VFQFPN Lead Count (#) 16
Temp. Grade P Pb (Lead) Free Yes
Function Switch Carrier Type Reel

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F2932NBGP8

RF Switch ICs F2932 RF Switch

Inventory:

5,822