ESD7571N2T5G

Overview of ESD7571N2T5G

The ESD7571N2T5G is a high-performance transient voltage suppressor (TVS) optimized for high-speed and low-voltage operations. It provides excellent performance for analog and digital signal switching applications.

Pinout

The ESD7571N2T5G pinout refers to the configuration and function of each pin in its DFN1006-2 package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the ESD7571N2T5G has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

• Industry Leading Capacitance Linearity Over Voltage: The ESD7571N2T5G features a unique capacitance design that provides excellent linearity over voltage, making it ideal for high-speed applications.
• Ultra−Low Capacitance: 0.35 pF Max: This TVS device has an extremely low capacitance value, making it suitable for high-frequency and high-speed applications where signal integrity is crucial.
• Low Leakage: < 1 nA: The ESD7571N2T5G has a very low leakage current, ensuring minimal power consumption and reduced noise in the circuit.
• Low Dynamic Resistance: < 1 Ω: This TVS device features a low dynamic resistance, allowing it to effectively clamp voltage spikes and protect sensitive circuits from damage.
• 1000 ESD IEC61000−4−2 Strikes ±8 kV Contact / Air Discharged: The ESD7571N2T5G has been tested to withstand 1000 ESD strikes, providing reliable protection against voltage spikes and electromagnetic interference (EMI).
• IEC61000−4−2 Level 4 ESD Protection: This TVS device meets the IEC61000−4−2 level 4 ESD protection standard, ensuring it can withstand severe ESD testing conditions.
• SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable: The ESD7571N2T5G is designed for automotive and other applications that require unique site and control change requirements, making it an excellent choice for these industries.
• Stand−off Voltage: 5.3 V: This TVS device has a stand−off voltage of 5.3 V, ensuring it can effectively protect circuits from voltage spikes up to this level.

Applications

The ESD7571N2T5G is suitable for various applications that require high-speed and low-voltage performance, including:

• Analog and digital signal switching
• High-frequency and high-speed data transmission
• Automotive and industrial control systems
• Medical devices and equipment
• Aerospace and defense applications

Equivalents

For similar functionalities, consider these alternatives to the ESD7571N2T5G:

• ESD7540N2T5G: A high-performance TVS device with a similar capacitance and leakage current profile.
• ESD7550N2T5G: A high-speed TVS device with a slightly higher stand−off voltage and capacitance value.
• ESD7560N2T5G: A low-voltage TVS device with a lower stand−off voltage and capacitance value, making it suitable for extremely low-voltage applications.

Frequently Asked Questions

Q: What is the maximum operating temperature of the ESD7571N2T5G?
A: The maximum operating temperature of the ESD7571N2T5G is 150°C.

Q: Can the ESD7571N2T5G be used in automotive applications?
A: Yes, the ESD7571N2T5G is AEC−Q101 qualified and PPAP capable, making it suitable for use in automotive and other industries that require unique site and control change requirements.

Q: What is the recommended PCB layout for the ESD7571N2T5G?
A: The recommended PCB layout for the ESD7571N2T5G includes a ground plane, power supply decoupling capacitors, and careful routing to minimize noise and electromagnetic interference (EMI).

Q: Can the ESD7571N2T5G be used in medical devices?
A: Yes, the ESD7571N2T5G is suitable for use in medical devices and equipment that require high-performance transient voltage suppression and low capacitance and leakage current.

Q: What is the recommended storage temperature range for the ESD7571N2T5G?
A: The recommended storage temperature range for the ESD7571N2T5G is -40°C to 150°C.